Datasheet > YJL2301C

YJL2301C

更新时间： 2024-05-14 22:08:24

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
7页	674K
描述
SOT-23

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中文翻译

获取价格

数据手册

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YJL2301C 数据手册

RoHS

COMPLIANT

YJL2301C

P-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

-20V

● I_D

-3.4A

● R_DS(ON)( at V_GS=-4.5V)

＜51mohm

● R_DS(ON)( at V_GS=-2.5V)

● R_DS(ON)( at V_GS=-1.8V)

＜67mohm

＜100mohm

General Description

● Trench Power LV MOSFET technology

● High Power and Current handing capability

● Low Gate Charge

● Moisture Sensitivity Level 1

● Epoxy Meets UL 94 V-0 Flammability Rating

● Halogen Free

Applications

● PWM applications

● Power management

● Load switch

Absolute Maximum Ratings (T =25℃unless otherwise noted)

■

Parameter

Symbol

Limit

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

-20

±10

-3.4

T_A=25℃

Drain Current

I_D

-2.7

T_A=70℃

Pulsed Drain Current ^A

Total Power Dissipation

I_DM

-14

T_A=25℃

T_A=70℃

P_D

0.64

125

Thermal Resistance Junction-to-Ambient ^B

Junction and Storage Temperature Range

R_θJA

℃/ W

℃

T_J,T_STG

-55～+150

Ordering Information (Example)

■

PACKING

PREFERED P/N

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

Marking

DELIVERY MODE

CODE

YJL2301C

S1.

3000

30000

120000

7“ reel

1 / 7

S-E027

Rev.3.2,2-Mar-22

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

12 3 4 5 6 7

中文翻译

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