RoHS
COMPLIANT
YJL03N06B
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
60V
● ID
3.0A
● RDS(ON)( at VGS= 10V)
<100mohm
● RDS(ON)( at VGS= 4.5V)
● RDS(ON)( at VGS= 2.5V)
<120mohm
<200mohm
General Description
● Trench Power LV MOSFET technology
● High Density Cell Design for Low RDS(ON)
● High Speed switching
Applications
● Battery protection
● Load switch
● Power management
Absolute Maximum Ratings (T =25℃unless otherwise noted)
■
A
Parameter
Symbol
Limit
Unit
Drain-source Voltage
Gate-source Voltage
VDS
VGS
60
±16
3
V
V
TA=25℃
Drain Current
ID
A
TA=70℃
2.4
Pulsed Drain Current A
IDM
12
A
W
Total Power Dissipation @ TA=25℃ Steady State
Thermal Resistance Junction-to-Ambient B
Junction and Storage Temperature Range
PD
1.2
RθJA
105
℃/ W
℃
TJ ,TSTG
-55~+150
Ordering Information (Example)
■
PACKING
PREFERED P/N
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
Marking
DELIVERY MODE
CODE
YJL03N06B
F2
S10B.
3000
30000
120000
7“ reel
1 / 7
S-E017
Rev.3.1,27-Aug-21
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com