RoHS
COMPLIANT
YJL03N06AQ
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
60V
● ID
3.0A
● RDS(ON)( at VGS=10V)
● RDS(ON)( at VGS=4.5V)
<100mohm
<120mohm
General Description
● Trench Power MV MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low RDS(ON)
● Moisture Sensitivity Level 1
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Fre
● Part no. with suffix “Q” means AEC-Q101 qualified
Applications
● DC-DC Converters
● Power management functions
Absolute Maximum Ratings (T =25℃unless otherwise noted)
■
A
Parameter
Symbol
Limit
60
Unit
V
Drain-source Voltage
Gate-source Voltage
VDS
VGS
±20
V
3
TA=25℃
Drain Current
ID
A
2.4
TA=70℃
Pulsed Drain Current A
Total Power Dissipation
IDM
12
A
W
1.2
TA=25℃
TA=70℃
PD
0.8
W
Thermal Resistance Junction-to-Ambient B
Junction and Storage Temperature Range
RθJA
104
℃/ W
℃
TJ ,TSTG
-55~+150
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
PREFERED P/N
Marking
DELIVERY MODE
CODE
YJL03N06AQ
F2
S10.
3000
30000
120000
7“ reel
1 / 7
S-S3541
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
Rev.1.2,27-Feb-24