Datasheet > YJJ3400AQ

YJJ3400AQ

更新时间： 2024-11-22 15:19:31

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
6页	307K
描述
SOT-23-6L

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中文翻译

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数据手册

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YJJ3400AQ 数据手册

RoHS

COMPLIANT

YJJ3400AQ

N-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

30V

● I_D

5.6A

● R_DS(ON)( at V_GS=10V)

● R_DS(ON)( at V_GS=4.5V)

＜26mΩ

＜33mΩ

General Description

● Trench Power MV MOSFET technology

● Voltage controlled small signal switch

● Low input Capacitance

● Moisture Sensitivity Level 1

● Low Input / Output Leakage

● Part no. with suffix “Q” means AEC-Q101 qualified

Applications

● Battery operated systems

● Solid-state relays

● Direct logic-level interface：TTL/CMOS

Absolute Maximum Ratings (T =25℃ unless otherwise noted)

■

Parameter

Symbol

Limit

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

±12

5.6

T_A=25℃

Drain Current

I_D

3.5

T_A=100℃

Pulsed Drain Current ^A

Total Power Dissipation ^B

I_DM

1.2

T_A=25℃

P_D

0.48

104

T_A=100℃

Thermal Resistance Junction-to-Ambient ^C

Junction and Storage Temperature Range

R_θJA

℃/W

T_J,T_STG

-55～+150

℃

Ordering Information (Example)

■

PACKING

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

DELIVERY

MODE

PREFERED P/N

Marking

CODE

3400A

3000

30000

120000

7“ reel

YJJ3400AQ

1 / 6

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

S-S5024

Rev.1.0,10-Apr-23

12 3 4 5 6

中文翻译

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