Datasheet > YJJ08N02A

YJJ08N02A

更新时间： 2024-04-09 18:59:54

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
7页	962K
描述
SOT-23-6L

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数据手册

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YJJ08N02A 数据手册

RoHS

COMPLIANT

YJJ08N02A

N-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

20V

● I_D

8.0A

● R_DS(ON)( at V_GS= 4.5V)

＜18mohm

● R_DS(ON)( at V_GS= 2.5V)

● R_DS(ON)( at V_GS= 1.8V)

＜22mohm

＜39mohm

General Description

● Trench Power LV MOSFET technology

● High density cell design for low R_DS(ON)

● High Speed switching

Applications

● Battery protection

● Load switch

● Power management

Absolute Maximum Ratings (T =25℃unless otherwise noted)

■

Parameter

Symbol

Limit

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

±10

T_A=25℃

6.4

Drain Current

I_D

T_A=70℃

Pulsed Drain Current ^A

I_DM

Total Power Dissipation @ T_A=25℃

P_D

1.5

Thermal Resistance Junction-to-Ambient ^B

Junction and Storage Temperature Range

R_θJA

℃/ W

℃

T_J,T_STG

-55～+150

Ordering Information (Example)

■

PACKING

PREFERED P/N

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

Marking

DELIVERY MODE

CODE

YJJ08N02A

8N02

3000

30000

120000

7’

1 / 7

S-E675

Rev.1.0,07-Feb-21

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

12 3 4 5 6 7

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