RoHS
COMPLIANT
YJG95G06AQ
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
60V
● ID
95A
● RDS(ON)( at VGS=10V)
● RDS(ON)( at VGS=4.5V)
● 100% EAS Tested
● 100% ▽VDS Tested
< 3.8mohm
< 4.5mohm
General Description
● Split gate trench MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low RDS(ON)
● Part no. with suffix ”Q” means AEC-Q101 qualified
Applications
● High Frequency Switching
● Synchronous Rectification
● 12V and 24V Automotive systems
Absolute Maximum Ratings (T =25℃unless otherwise noted)
■
A
Parameter
Symbol
Limit
60
Unit
V
Drain-source Voltage
Gate-source Voltage
VDS
VGS
±20
V
95
Tc=25℃
Drain Current
ID
A
60
Tc=100℃
Pulsed Drain Current A
Avalanche energy B
IDM
390
A
EAS
1200
113
mJ
Tc=25℃
Total Power Dissipation C
PD
W
45
Tc=100℃
Junction and Storage Temperature Range
TJ ,TSTG
-55~+150
℃
■Thermal resistance
Parameter
Symbol
RθJA
Typ
38
Max
50
Units
Thermal Resistance Junction-to-Ambient D
Thermal Resistance Junction-to-Case
Steady-State
Steady-State
℃/W
RθJC
0.9
1.1
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
PREFERED P/N
Marking
DELIVERY MODE
CODE
YJG95G06AQ
F1
YJG95G06A
5000
10000
100000
13“ reel
1 / 7
S-D270
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
Rev.1.0,02-Mar-23