RECOMMEND
YJG2D7G06A
FOR NEW DESIGN
RoHS
COMPLIANT
YJG95G06A
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
60V
● ID
95A
● RDS(ON)( at VGS=10V)
● RDS(ON)( at VGS=4.5V)
● 100% EAS Tested
● 100% ▽VDS Tested
<2.5 mohm
<3.4 mohm
General Description
● Split Gate Trench MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low RDS(ON)
● Moisture Sensitivity Level 1
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
Applications
● DC-DC Converters
● Power management functions
● Synchronous-rectification applications
Absolute Maximum Ratings (T =25℃unless otherwise noted)
■
A
Parameter
Symbol
Limit
Unit
Drain-source Voltage
Gate-source Voltage
VDS
VGS
ID
60
±20
155
V
V
A
Drain Current (Silicon limited)
TC=25℃
95
Drain Current A
ID
A
TC=100℃
60
Pulsed Drain Current B
Avalanche energy C
IDM
EAS
390
A
mJ
W
500
Total Power Dissipation D
PD
120
Thermal Resistance Junction-to-Case
Thermal Resistance Junction-to-Ambient E
Junction and Storage Temperature Range
RθJC
RθJA
1.04
20
℃/ W
TJ ,TSTG
-55~+150
℃
Ordering Information (Example)
■
PACKING
PREFERED P/N
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
Marking
DELIVERY MODE
CODE
YJG95G06A
F1
YJG95G06A
5000
10000
50000
13“ reel
1 / 7
S-E047
Rev.3.4,22-Mar-24
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com