Datasheet > YJG88G12A

YJG88G12A

更新时间： 2024-09-24 15:18:59

品牌	Logo	应用领域
扬杰 - YANGJIE		光电二极管
页数	文件大小	规格书
6页	884K
描述
PDFN5060-8L

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中文翻译

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数据手册

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YJG88G12A 数据手册

RoHS

COMPLIANT

YJG88G12A

N-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

120V

● I_D

88A

● R_DS(ON)( at V_GS=10V)

● R_DS(ON)( at V_GS=4.5V)

● 100% EAS Tested

● 100% ▽VDS Tested

＜7.6mohm

＜9.6mohm

General Description

● Split gate trench MOSFET technology

● Excellent package for heat dissipation

● High density cell design for low R_DS(ON)

● Moisture Sensitivity Level 1

● Epoxy Meets UL 94 V-0 Flammability Rating

● Halogen Free

Applications

● Power switching application

● Hard switched and high frequency circuits

● Uninterruptible power supply

Absolute Maximum Ratings (T =25℃unless otherwise noted)

■

Parameter

Symbol

Limit

120

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

±20

T_C=25℃

Drain Current

I_D

Tc=100℃

Pulsed Drain Current ^A

Avalanche energy ^B

I_DM

352

EAS

400

120

Tc=25℃

Total Power Dissipation ^C

P_D

Tc=100℃

-55～+150

Junction and Storage Temperature Range

T_J,T_STG

℃

■Thermal resistance

Parameter

Symbol

R_θJA

Typ

Max

Units

Thermal Resistance Junction-to-Ambient ^D

Thermal Resistance Junction-to-Case

t≤10S

Steady-State

℃/W

R_θJC

0.84

1.04

Ordering Information (Example)

■

PACKING

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

PREFERED P/N

Marking

DELIVERY MODE

CODE

YJG88G12A

5000

10000

100000

13“ reel

1 / 6

S-E108

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

Rev.2.2,24-Oct-23

12 3 4 5 6

中文翻译

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