Datasheet > YJG55G10A

YJG55G10A

更新时间： 2024-11-21 17:01:27

品牌	Logo	应用领域
扬杰 - YANGJIE		光电二极管
页数	文件大小	规格书
8页	683K
描述
PDFN5060-8L

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中文翻译

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YJG55G10A 数据手册

RoHS

COMPLIANT

YJG55G10A

N-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

100V

55A

● I_D

● R_DS(ON)( at V_GS=10V)

● R_DS(ON)( at V_GS=4.5V)

● 100% EAS Tested

● 100% ▽VDS Tested

＜12mΩ

＜16mΩ

General Description

● Split gate trench MOSFET technology

● Excellent package for heat dissipation

● High density cell design for low R_DS(ON)

● Moisture Sensitivity Level 1

● Epoxy Meets UL 94 V-0 Flammability Rating

Applications

● Power switching application

● Uninterruptible power supply

● DC-DC convertor

Absolute Maximum Ratings (T =25℃ unless otherwise noted)

■

Parameter

Symbol

Limit

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

100

±20

T_A=25℃

T_A=100℃

T_C=25℃

Drain Current

I_D

T_C=100℃

Pulsed Drain Current ^A

Avalanche energy ^B

I_DM

170

EAS

144

2.5

T_A=25℃

T_A=100℃

T_C=25℃

T_C=100℃

Total Power Dissipation ^C

P_D

-55～+150

Junction and Storage Temperature Range

T_J,T_STG

℃

■Thermal resistance

Parameter

Symbol

R_θJA

Typ

Max

Units

Thermal Resistance Junction-to-Ambient ^D

Thermal Resistance Junction-to-Case

Steady-State

℃/W

R_θJC

1.1

1.4

Ordering Information (Example)

■

PACKING

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

DELIVERY

MODE

PREFERED P/N

Marking

CODE

YJG55G10A

5000

10000

100000

13“ reel

1 / 8

S-E296

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

Rev.1.1,24-Oct-23

12 3 4 5 6 7 8

中文翻译

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