RoHS
COMPLIANT
YJG210G06AR
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
60V
● ID
210A
● RDS(ON)( at VGS=10V)
● RDS(ON)( at VGS=4.5V)
● 100% EAS Tested
● 100% ▽VDS Tested
<1.6mohm
<2.5mohm
General Description
● Split gate trench MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low RDS(ON)
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
Applications
● Power switching application
● Uninterruptible power supply
● PD charge
● DC-DC convertor
Absolute Maximum Ratings (T =25℃ unless otherwise noted)
■
A
Parameter
Symbol
Limit
60
Unit
V
Drain-source Voltage
Gate-source Voltage
VDS
VGS
±20
25
V
TA=25℃
15
TA=100℃
TC=25℃
Drain Current
ID
A
210
132
TC =100℃
Pulsed Drain Current A
Avalanche energy B
IDM
840
A
EAS
576
mJ
2.2
TA=25℃
TA=100℃
TC=25℃
TC =100℃
0.9
Total Power Dissipation C
PD
W
208
83
Junction and Storage Temperature Range
TJ ,TSTG
-55~+150
℃
■Thermal resistance
Parameter
Symbol
RθJA
Typ
45
Max
55
Units
Thermal Resistance Junction-to-Ambient D
Steady-State
Steady-State
℃/W
Thermal Resistance Junction-to-Case
RθJC
0.5
0.6
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
PREFERED P/N
Marking
G210G06AR
DELIVERY MODE
CODE
YJG210G06AR
F1
5000
10000
100000
13“ reel
1 / 8
S-E455
Rev.1.0,27-Oct-23
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com