RoHS
COMPLIANT
YJG20P04A
P-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
-40 V
● ID
-20 A
● RDS(ON)( at VGS=-10V)
● RDS(ON)( at VGS=-4.5V)
● 100% EAS Tested
● 100% ▽VDS Tested
<30 mΩ
<45 mΩ
General Description
● Trench Power LV MOSFET technology
● Low RDS(on) & FOM
● Extremely low switching loss
● Excellent stability and uniformity
● High density cell design for low RDS(ON)
● Moisture Sensitivity Level 1
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
Applications
● Power management
● Portable equipment
Absolute Maximum Ratings (T =25℃ unless otherwise noted)
■
A
Parameter
Symbol
Limit
-40
Unit
V
Drain-source Voltage
Gate-source Voltage
VDS
VGS
±20
-6
V
TA=25℃
-3.8
-20
TA=100℃
TC=25℃
Drain Current
ID
A
-12
TC =100℃
Pulsed Drain Current A
Avalanche energy B
IDM
-70
A
EAS
50
mJ
2.5
TA=25℃
TA=100℃
TC=25℃
TC =100℃
1
Total Power Dissipation C
PD
W
31
12
-55~+150
Junction and Storage Temperature Range
TJ ,TSTG
℃
■Thermal resistance
Parameter
Symbol
RθJA
Typ
40
Max
50
Units
Thermal Resistance Junction-to-Ambient D
Thermal Resistance Junction-to-Case
Steady-State
Steady-State
℃/W
RθJC
3.2
4
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY
MODE
PREFERED P/N
Marking
CODE
YJG20P04A
F1
YJG20P04A
5000
10000
100000
13“ reel
1 / 7
S-E311
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
Rev.1.1,23-Oct-23