Datasheet > YJG105N03A

YJG105N03A

更新时间： 2024-04-09 19:02:06

品牌	Logo	应用领域
扬杰 - YANGJIE		光电二极管
页数	文件大小	规格书
7页	846K
描述
PDFN5060-8L

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数据手册

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YJG105N03A 数据手册

RoHS

COMPLIANT

YJG105N03A

N-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

30V

● I_D

105A

● R_DS(ON)( at V_GS= 10V)

● R_DS(ON)( at V_GS= 4.5V)

● 100% EAS Tested

● 100% ▽V_DSTested

＜3.0mohm

＜4.0mohm

General Description

● Trench Power MV MOSFET technology

● Excellent package for heat dissipation

● High density cell design for low R_DS(ON)

● Moisture Sensitivity Level 1

● Epoxy Meets UL 94 V-0 Flammability Rating

● Halogen Free

Applications

● DC-DC Converters

● Power management functions

● Backlighting

Absolute Maximum Ratings (T =25℃unless otherwise noted)

■

Parameter

Symbol

Limit

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

±20

105

T_C=25℃

Drain Current

I_D

T_C=100℃

Pulsed Drain Current ^A

I_DM

415

Total Power Dissipation @ T_C=25℃

Single Pulse Avalanche Energy ^B

P_D

E_AS

507

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Ambient

Junction and Storage Temperature Range

R_θJC

R_θJA

T_J,T_STG

1.8

℃/ W

℃

-55～+150

Ordering Information (Example)

■

PACKING

PREFERED P/N

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

Marking

DELIVERY MODE

CODE

YJG105N03A

5000

10000

100000

13“ reel

1 / 7

S-E619

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

Rev.3.6,14-Nov-23

12 3 4 5 6 7

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