RoHS
COMPLIANT
YJG100G08E
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
80V
● ID
100A
● RDS(ON)( at VGS=10V)
● RDS(ON)( at VGS=4.5V)
● 100% EAS Tested
● 100% ▽VDS Tested
<4.5mohm
<6.5mohm
General Description
● Split gate trench MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low RDS(ON)
● Moisture Sensitivity Level 1
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
Applications
● Battery protection
● Load switch
● Uninterruptible power supply
Absolute Maximum Ratings (T =25℃unless otherwise noted)
■
A
Parameter
Symbol
Limit
80
Unit
V
Drain-source Voltage
Gate-source Voltage
VDS
VGS
±20
100
V
TC=25℃
Drain Current
ID
A
TC=100℃
58
Pulsed Drain Current A
Avalanche energy B
IDM
400
A
EAS
600
mJ
Tc=25℃
152
Total Power Dissipation C
PD
W
Tc=100℃
61
-55~+150
℃
Junction and Storage Temperature Range
TJ ,TSTG
■Thermal resistance
Parameter
Symbol
Limit
Units
Thermal Resistance Junction-to-Ambient D
Thermal Resistance Junction-to-Ambient D
Thermal Resistance Junction-to-Case
t≤10S
22.3
RθJA
℃/W
Steady-State
Steady-State
40.7
0.82
RθJC
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY
MODE
PREFERED P/N
Marking
CODE
YJG100G08E
F1
YJG100G08E
5000
10000
100000
13“ reel
1 / 7
S-E182
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
Rev.1.1,24-Oct-23