RoHS
COMPLIANT
YJG100G04HHQ
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
40V
● ID
100A
● RDS(ON)( at VGS=10V)
● 100% EAS Tested
● 100% ▽VDS Tested
<2.6mΩ
General Description
● Split gate trench MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low RDS(ON)
● Moisture Sensitivity Level 1
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
● Part no. with suffix ”Q” means AEC-Q101 qualified
Applications
● Power switching application
● Uninterruptible power supply
● 12V Automotive systems
Absolute Maximum Ratings (T =25℃unless otherwise noted)
■
A
Parameter
Symbol
Limit
Unit
Drain-source Voltage
Gate-source Voltage
VDS
VGS
40
±20
17
V
V
TA=25℃
12
TA=100℃
TC=25℃
Drain Current
ID
A
100
84
TC =100℃
Pulsed Drain Current A
Avalanche energy B
IDM
400
132
2.7
A
EAS
mJ
TA=25℃
TA=100℃
TC=25℃
TC =100℃
1.3
Total Power Dissipation C
PD
W
100
50
Junction and Storage Temperature Range
TJ ,TSTG
-55~+175
℃
■Thermal resistance
Parameter
Symbol
RθJA
Typ
45
Max
55
Units
Thermal Resistance Junction-to-Ambient D
Thermal Resistance Junction-to-Case
Steady-State
Steady-State
℃/W
RθJC
1.2
1.5
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY
MODE
PREFERED P/N
Marking
CODE
YJG100G04HHQ
F1
YJG100G04H
5000
10000
100000
13“ reel
1 / 7
S-D383
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
Rev.1.0,12-Dec-23