Datasheet > YJG055P10A

YJG055P10A

更新时间： 2024-09-18 18:09:43

品牌	Logo	应用领域
扬杰 - YANGJIE		光电二极管
页数	文件大小	规格书
7页	475K
描述
PDFN5060-8L

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中文翻译

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YJG055P10A 数据手册

RoHS

COMPLIANT

YJG055P10A

P-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

-100 V

● I_D

-25 A

● R_DS(ON)( at V_GS=-10V)

● R_DS(ON)( at V_GS=-4.5V)

● 100% EAS Tested

● 100% ▽VDS Tested

＜55 mΩ

＜64 mΩ

General Description

● Trench Power MOSFET technology

● Low R_DS(on)& FOM

● Extremely low switching loss

● Excellent stability and uniformity

● High density cell design for low R_DS(ON)

● Moisture Sensitivity Level 1

● Epoxy Meets UL 94 V-0 Flammability Rating

● Halogen Free

Applications

● Power management

● Portable equipment

Absolute Maximum Ratings (T =25℃ unless otherwise noted)

■

Parameter

Symbol

V_DS

Limit

-100

±20

Unit

Drain-source Voltage

Gate-source Voltage

V_GS

-4

T_A=25℃

T_A=100℃

T_C=25℃

T_C=100℃

Continuous Drain Current

(Note 1,2 )

Steady-State

-2.5

I_D

-25

Continuous Drain Current

(Note 1,3 )

-15.5

-100

144

Pulsed Drain Current

Avalanche energy

I_DM

T_C=25℃, t_p=100µs

V_G=-10V, R_G=25Ω, L=2mH, IAS=-12A

EAS

2.2

T_A=25℃

Steady-State

Total Power Dissipation

(Note 1,2)

0.9

T_A=100℃

P_D

62.5

T_C=25℃

Steady-State

Total Power Dissipation

(Note 1,3 )

T_C=100℃

Junction and Storage Temperature Range

T_J,T_STG

-55～+150

℃

■Thermal resistance

Parameter

Symbol

R_θJA

Typ

Max

Units

Thermal Resistance Junction-to-Ambient (Note 2)

Thermal Resistance Junction-to-Case

Steady-State

℃/W

R_θJC

1.7

Ordering Information (Example)

■

PACKING

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

DELIVERY

MODE

PREFERED P/N

Marking

CODE

YJG055P10A

5000

10000

100000

13“ reel

1 / 7

S-E516

Rev.1.0,15-Mar-24

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

12 3 4 5 6 7

中文翻译

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