RoHS
COMPLIANT
YJF80GP06H
P-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
-60 V
● ID
-80 A
● RDS(ON)( at VGS=-10V)
● RDS(ON)( at VGS=-6V)
● 100% EAS Tested
● 100% ▽VDS Tested
<9.5 mΩ
<11 mΩ
General Description
●Split gate trench MOSFET technology
●Low RDS(on) & FOM
●Excellent stability and uniformity
●Epoxy Meets UL 94 V-0 Flammability Rating
●Halogen Free
Applications
● Power management
● Portable equipment
Absolute Maximum Ratings (T =25℃ unless otherwise noted)
■
A
Parameter
Symbol
Limit
Unit
Drain-source Voltage
Gate-source Voltage
VDS
VGS
-60
±18
-12
V
V
TA=25℃
-7.5
-80
TA=100℃
TC=25℃
Drain Current
ID
A
-50
TC =100℃
Pulsed Drain Current A
Avalanche energy B
IDM
-320
729
2.5
A
EAS
mJ
TA=25℃
TA=100℃
TC=25℃
TC =100℃
1
Total Power Dissipation C
PD
W
73
29
Junction and Storage Temperature Range
TJ ,TSTG
-55~+150
℃
■Thermal resistance
Parameter
Symbol
RθJA
Typ
40
Max
50
Units
Thermal Resistance Junction-to-Ambient D
Thermal Resistance Junction-to-Case
Steady-State
Steady-State
℃/W
RθJC
1.4
1.7
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY
MODE
PREFERED P/N
Marking
CODE
YJF80GP06H
B1
YJF80GP06H
50
/
5000
Tube
1 / 7
S-E248
Rev.1.0,26-Aug-22
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com