RoHS
COMPLIANT
YJF70G10A
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
100V
● ID
70A
● RDS(ON)( at VGS=10V)
● RDS(ON)( at VGS=4.5V)
● 100% EAS Tested
● 100% ▽VDS Tested
<5.5mΩ
<6.5mΩ
General Description
●Split gate trench MOSFET technology
●Low RDS(on) & FOM
●Excellent stability and uniformity
●Epoxy Meets UL 94 V-0 Flammability Rating
●Halogen Free
Applications
● Power management
● Portable equipment
Absolute Maximum Ratings (T =25℃ unless otherwise noted)
■
A
Parameter
Symbol
Limit
Units
Drain-source Voltage
Gate-source Voltage
VDS
VGS
100
±20
15
V
V
TA=25℃
9.5
TA=100℃
TC=25℃
Drain Current
ID
A
70
44
TC =100℃
Pulsed Drain Current A
Avalanche energy B
IDM
300
306
2.5
A
EAS
mJ
TA=25℃
TA=100℃
TC=25℃
TC =100℃
1
Total Power Dissipation C
PD
W
62
25
Junction and Storage Temperature Range
TJ ,TSTG
-55~+150
℃
■Thermal resistance
Parameter
Symbol
RθJA
Typ
40
Max
50
2
Units
Thermal Resistance Junction-to-Ambient D
Thermal Resistance Junction-to-Case
Steady-State
Steady-State
℃/W
RθJC
1.6
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY
MODE
PREFERED P/N
Marking
CODE
YJF70G10A
B1
YJF70G10A
50
/
5000
Tube
1 / 8
S-E274
Rev.1.0,28-Nov-22
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com