RoHS
COMPLIANT
YJF50G10H
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
100V
50A
● ID
● RDS(ON)( at VGS=10V)
● RDS(ON)( at VGS=6V)
● 100% EAS Tested
● 100% ▽VDS Tested
<12mΩ
<13mΩ
General Description
● Split gate trench MOSFET technology
● Excellent package for heat dissipation
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
Applications
● Power switching application
● Uninterruptible power supply
● DC-DC convertor
Absolute Maximum Ratings (T =25℃ unless otherwise noted)
■
A
Parameter
Symbol
Limit
Unit
V
Drain-source Voltage
Gate-source Voltage
VDS
100
VGS
±20
V
8
TA=25℃
5
TA=100℃
TC=25℃
Drain Current
ID
A
50
31
TC =100℃
Pulsed Drain Current A
IDM
200
A
B
Avalanche energy
EAS
169
mJ
2
0.8
TA=25℃
TA=100℃
TC=25℃
TC =100℃
Total Power Dissipation C
PD
W
41
16
Junction and Storage Temperature Range
TJ ,TSTG
-55~+150
℃
■Thermal resistance
Parameter
Symbol
RθJA
Typ
50
Max
65
3
Units
Thermal Resistance Junction-to-Ambient D
Thermal Resistance Junction-to-Case
Steady-State
Steady-State
℃/W
RθJC
2.5
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY
MODE
PREFERED P/N
Marking
CODE
YJF50G10H
B1
YJF50G10H
50
/
5000
Tube
1 / 8
S-E194
Rev.1.0,19-Jan-22
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com