RoHS
COMPLIANT
YJF30G15H
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
150V
30A
● ID
● RDS(ON)( at VGS=10V)
● RDS(ON)( at VGS=6V)
● 100% EAS Tested
● 100% ▽VDS Tested
<24mΩ
<26mΩ
General Description
●Split gate trench MOSFET technology
●Low RDS(on) & FOM
●Excellent stability and uniformity
●Epoxy Meets UL 94 V-0 Flammability Rating
●Halogen Free
Applications
● Power management
● Portable equipment
Absolute Maximum Ratings (T =25℃ unless otherwise noted)
■
A
Parameter
Symbol
Limit
Units
Drain-source Voltage
Gate-source Voltage
VDS
VGS
150
V
V
±2 0
7
TA=25℃
4
TA=100℃
TC=25℃
Drain Current
ID
A
30
19
TC =100℃
Pulsed Drain Current A
Avalanche energy B
IDM
120
A
EAS
285
mJ
2.5
TA=25℃
TA=100℃
TC=25℃
TC =100℃
1
50
Total Power Dissipation C
PD
W
20
Junction and Storage Temperature Range
TJ ,TSTG
-55~+150
℃
■Thermal resistance
Parameter
Symbol
RθJA
Typ
40
2
Max
50
Units
Thermal Resistance Junction-to-Ambient D
Thermal Resistance Junction-to-Case
Steady-State
Steady-State
℃/W
RθJC
2.5
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY
MODE
PREFERED P/N
Marking
CODE
YJF30G15H
B1
YJF30G15H
50
/
5000
Tube
1 / 8
S-E346
Rev.1.0,16-Jun-23
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com