RoHS
COMPLIANT
YJF11C65MJ
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
650V
11A
● ID
● RDS(ON)( at VGS=10V)
● 100% EAS Tested
● 100% ▽VDS Tested
<360mΩ
General Description
● Super Junction High Voltage MOSFET technology
● Low RDS(ON) & FOM
● Extremely low switching loss
● Excellent stability and uniformity
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
Applications
● High-frequency Switching
● Power factor correction
● Uninterruptible Power Supply
Absolute Maximum Ratings (T =25℃ unless otherwise noted)
■
A
Parameter
Symbol
Limit
Unit
Drain-source Voltage
Gate-source Voltage
VDS
VGS
650
±30
V
V
1.2
TA=25℃
0.75
11
TA=100℃
TC=25℃
Drain Current
ID
A
6.9
TC =100℃
Pulsed Drain Current A
Avalanche energy B
IDM
20
A
EAS
135
mJ
1.95
0.78
44.6
17.8
-55~+150
TA=25℃
TA=100℃
TC=25℃
TC =100℃
Total Power Dissipation C
PD
W
Junction and Storage Temperature Range
TJ ,TSTG
℃
■Thermal resistance
Parameter
Symbol
RθJA
Typ
50
Max
64
Units
Thermal Resistance Junction-to-Ambient D
Thermal Resistance Junction-to-Case
Steady-State
Steady-State
℃/W
RθJC
2.3
2.8
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY
MODE
PREFERED P/N
Marking
CODE
YJF11C65MJ
B1
YJF11C65MJ
50
/
5000
Tube
1 / 8
S-E498
Rev.1.0,30-Jan-24
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com