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YJF11C65MJ PDF预览

YJF11C65MJ

更新时间: 2024-09-18 18:09:47
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扬杰 - YANGJIE /
页数 文件大小 规格书
8页 734K
描述
ITO-220AB

YJF11C65MJ 数据手册

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RoHS  
COMPLIANT  
YJF11C65MJ  
N-Channel Enhancement Mode Field Effect Transistor  
Product Summary  
● VDS  
650V  
11A  
● ID  
● RDS(ON)( at VGS=10V)  
● 100% EAS Tested  
● 100% VDS Tested  
360mΩ  
General Description  
● Super Junction High Voltage MOSFET technology  
● Low RDS(ON) & FOM  
● Extremely low switching loss  
● Excellent stability and uniformity  
● Epoxy Meets UL 94 V-0 Flammability Rating  
● Halogen Free  
Applications  
● High-frequency Switching  
● Power factor correction  
● Uninterruptible Power Supply  
Absolute Maximum Ratings (T =25unless otherwise noted)  
A
Parameter  
Symbol  
Limit  
Unit  
Drain-source Voltage  
Gate-source Voltage  
VDS  
VGS  
650  
±30  
V
V
1.2  
TA=25℃  
0.75  
11  
TA=100℃  
TC=25℃  
Drain Current  
ID  
A
6.9  
TC =100℃  
Pulsed Drain Current A  
Avalanche energy B  
IDM  
20  
A
EAS  
135  
mJ  
1.95  
0.78  
44.6  
17.8  
-55+150  
TA=25℃  
TA=100℃  
TC=25℃  
TC =100℃  
Total Power Dissipation C  
PD  
W
Junction and Storage Temperature Range  
TJ ,TSTG  
Thermal resistance  
Parameter  
Symbol  
RθJA  
Typ  
50  
Max  
64  
Units  
Thermal Resistance Junction-to-Ambient D  
Thermal Resistance Junction-to-Case  
Steady-State  
Steady-State  
/W  
RθJC  
2.3  
2.8  
Ordering Information (Example)  
PACKING  
MINIMUM  
PACKAGE(pcs)  
INNER BOX  
QUANTITY(pcs)  
OUTER CARTON  
QUANTITY(pcs)  
DELIVERY  
MODE  
PREFERED P/N  
Marking  
CODE  
YJF11C65MJ  
B1  
YJF11C65MJ  
50  
/
5000  
Tube  
1 / 8  
S-E498  
Rev.1.0,30-Jan-24  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
www.21yangjie.com