RoHS
COMPLIANT
YJD50P04AJQ
P-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
-40 V
● ID
-50 A
● RDS(ON)( at VGS=-10V)
● RDS(ON)( at VGS=-4.5V)
● 100% EAS Tested
● 100% ▽VDS Tested
<15 mΩ
<22 mΩ
General Description
● Low RDS(on) & FOM
● Extremely low switching loss
● Excellent stability and uniformity
● Moisture Sensitivity Level 1
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
● Part no. with suffix “Q” means AEC-Q101 qualified
Applications
● Power management
● Portable equipment
● 12V Automotive systems
Absolute Maximum Ratings (T =25℃ unless otherwise noted)
■
A
Parameter
Symbol
Limit
Unit
Drain-source Voltage
Gate-source Voltage
VDS
VGS
-50
V
V
±20
8
TA=25℃
7
50
TA=100℃
TC=25℃
Drain Current
ID
A
31
TC =100℃
Pulsed Drain Current A
Avalanche energy B
IDM
200
22.5
2.5
A
EAS
mJ
TA=25℃
TA=100℃
TC=25℃
TC =100℃
1
Total Power Dissipation C
PD
W
83
33
Junction and Storage Temperature Range
TJ ,TSTG
-55~+150
℃
■Thermal resistance
Parameter
Symbol
RθJA
Typ
40
Max
50
Units
Thermal Resistance Junction-to-Ambient D
Thermal Resistance Junction-to-Case
Steady-State
Steady-State
℃/W
RθJC
1.2
1.5
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY
MODE
PREFERED P/N
Marking
CODE
YJD50P04AJQ
F1
YJD50P04AJ
2500
/
25000
13“ reel
1 / 7
S-B3279
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
Rev.1.0,25-Dec-23