Datasheet > YJD45G10B

YJD45G10B

更新时间： 2024-09-18 17:01:35

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
7页	816K
描述
TO-252

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中文翻译

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YJD45G10B 数据手册

RoHS

COMPLIANT

YJD45G10B

N-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

100V

45A

● I_D

● R_DS(ON)( at V_GS=10V)

● 100% EAS Tested

● 100% ▽VDS Tested

＜17 mohm

General Description

● Low R_DS(on)& FOM

● Extremely low switching loss

● Excellent stability and uniformity

● Fast switching and soft recovery

● Moisture Sensitivity Level 1

● Epoxy Meets UL 94 V-0 Flammability Rating

● Halogen Free

Applications

● Power switching application

● Hard switched and high frequency circuits

● Uninterruptible power supply

Absolute Maximum Ratings (T =25℃unless otherwise noted)

■

Parameter

Symbol

Limit

100

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

±20

7.5

T_A=25℃

T_A=100℃

T_C=25℃

T_C=100℃

4.5

Drain Current

I_D

28.5

180

Pulsed Drain Current ^A

Avalanche energy ^B

I_DM

EAS

2.5

T_A=25℃

T_A=100℃

Tc=25℃

Tc=100℃

Total Power Dissipation ^C

P_D

28.8

-55～+150

Junction and Storage Temperature Range

T_J,T_STG

℃

■Thermal resistance

Parameter

Symbol

R_θJA

Typ

Max

Units

Thermal Resistance Junction-to-Ambient ^D

Thermal Resistance Junction-to-Case

t≤10S

Steady-State

℃/W

R_θJC

1.35

1.7

Ordering Information (Example)

■

PACKING

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

PREFERED P/N

Marking

DELIVERY MODE

CODE

YJD45G10B

F1/F2

YJD45G10B

2500

25000

13”Reel

1 / 7

S-E401

Rev.3.3,29-Nov-22

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

12 3 4 5 6 7

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