Datasheet > YJD212080NCFG1Q

YJD212080NCFG1Q

更新时间： 2024-11-17 17:00:55

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
9页	1059K
描述
TO-247-4L

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中文翻译

获取价格

数据手册

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YJD212080NCFG1Q 数据手册

RoHS

YJD212080NCFG1Q

COMPLIANT

Silicon Carbide Power MOSFET （N-Channel Enhancement）

V_DS

1200V

39A

Features

● High speed switching

● Essentially no switching losses

I_D

（

）

25°C

R_DS(on)

80mΩ

● Reduction of heat sink requirements

● Maximum working temperature at 175 °C

● High blocking voltage

● Fast Intrinsic diode with low recovery current

● High-frequency operation

● Halogen free, RoHS compliant

● AEC-Q101 qualified

Typical Applications

Typical applications are in power factor correction(PFC), solar

inverter, uninterruptible power supply, motor drives, photovoltaic

inverter, electric car and charger.

Mechanical Data

●

ackage: TO247-4L

● Terminals: Tin plated leads

● Polarity: As marked

(T =25℃Unless otherwise specified

■

Maximum Ratings

）

PARAMTETER

SYMBOL UNIT

VALUE

TEST CONDITIONS

D212080NCFG1Q

NOTE

Device marking code

Drain source voltage

@ T_j=25°C

V_DS,max

V_GS,max

V_GS,op

1200

V_GS=0 V, I_D=100uA

Gate source voltage

@ T_j=25°C

-8/+22

-4/+18

Absolute maximum values

Note1

Note2

Gate source voltage

@ T_j=25°C

Recommended operational values

V_GS=18V, Tc=25℃

Continuous drain current @ T_c=25°C

Continuous drain current @ T_c=100°C

Fig.18

Fig.23

I_D

V_GS=18V, Tc=100℃

Pulsed drain current

I_D(pulsed)

Pulse width t_plimited by Tj_,max

Power Dissipation

223

T_c=25°C , Tj = 175℃

T_c=110°C, Tj = 175℃

P_TOT

Fig.17

Power Dissipation

Operating junction and Storage temperature range

Soldering temperature

Mounting torque

Tj ,Tstg

T_L

°C

-55 to +175

260

1.6mm (0.063’’) from case for 10s

M3 screw Maximum of mounting

process: 3

T_M

0.6

1 / 9

Yangzhou Yangjie Electronic Technology Co., Ltd.

S-SIC080

www.21yangjie.com

Rev.1.1,14-Mar-24

12 3 4 5 6 7...9

中文翻译

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