Datasheet > YJD212060NCFGH

YJD212060NCFGH

更新时间： 2024-11-17 17:01:35

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
8页	1004K
描述
TO-247-4L

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中文翻译

获取价格

数据手册

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YJD212060NCFGH 数据手册

RoHS

COMPLIANT

YJD212060NCFGH

Silicon Carbide Power MOSFET （N-Channel Enhancement）

V_DS

1200V

44.5A

60mΩ

Features

● High speed switching

● Essentially no switching losses

I_D

_（25°C_）

R_DS(on)

● Reduction of heat sink requirements

● Maximum working temperature at 175 °C

● High blocking voltage

● Fast Intrinsic diode with low recovery current

● High-frequency operation

● Halogen free, RoHS compliant

Typical Applications

Typical applications are in power factor correction(PFC), solar

inverter, uninterruptible power supply, motor drives, photovoltaic

inverter, electric car and charger.

Mechanical Data

●

ackage: TO247-4L

● Terminals: Tin plated leads

● Polarity: As marked

(T =25℃ Unless otherwise specified

■

Maximum Ratings

）

PARAMTETER

SYMBOL UNIT

VALUE

TEST CONDITIONS

D212060NCFGH

NOTE

Device marking code

Drain source voltage

@ T_j=25°C

V_DS,max

V_GS,max

V_GS,op

1200

V_GS=0 V, I_D=100uA

Gate source voltage

@ T_j=25°C

Absolute maximum values

(AC f > 1Hz, duty cycle < 1%)

-10/+25

-5/+20

44.5

Gate source voltage

@ T_j=25°C

Recommended operational values

V_GS=20V, Tc=25℃

Continuous drain current @ T_c=25°C

Continuous drain current @ T_c=110°C

Pulsed drain current

Fig.14

Fig.15

I_D

30.6

V_GS=20V, Tc=110℃

I_D(pulsed)

E_AS

90.5

Pulse width tp limited by Tj,max

Avalanche energy, Single Pulse

Power Dissipation

1.25

250

V_DD=100V, I_D=10A

P_TOT

Tj ,Tstg

T_L

T_c=25°C , Tj = 175℃

Fig.13

Operating junction and Storage temperature range

Soldering temperature

°C

-55 to +175

260

1.6mm (0.063’’) from case for 10s

M3 screw Maximum of mounting

process: 3

Mounting torque

T_M

1.0

1 / 8

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

12 3 4 5 6 7 8

中文翻译

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