RoHS
YJD212040NCFG1
COMPLIANT
Silicon Carbide Power MOSFET (N-Channel Enhancement)
VDS
1200V
63A
Features
● High speed switching
● Essentially no switching losses
ID
(
)
25°C
RDS(on)
40mΩ
● Reduction of heat sink requirements
● Maximum working temperature at 150 °C
● High blocking voltege
● Fast Intrinsic diode with low recovery current
● High-frequency operation
● Halogen free, RoHS compliant
Typical Applications
Typical applications are in power factor correction(PFC), solar
inverter, uninterruptible power supply, motor drives, photovoltaic
inverter, electric car and charger.
Mechanical Data
●
ackage: TO247-4L
P
● Terminals: Tin plated leads
● Polarity: As marked
(T =25℃Unless otherwise specified
■
Maximum Ratings
)
C
PARAMTETER
SYMBOL UNIT
VALUE
TEST CONDITIONS
NOTE
Device marking code
D212040NCFG1
Drain source voltage
@ Tj=25°C
VDS,max
VGS,max
VGS,op
V
V
V
1200
-10/+25
-5/+20
63
VGS=0 V, ID=100uA
Gate source voltage
@ Tj=25°C
Absolute maximum values
Gate source voltage
@ Tj=25°C
Recommended operational values
Note1、2
VGS=20V, Tc=25℃
Continuous drain current @ Tc=25°C
Continuous drain current @ Tc=100°C
Pulsed drain current
Fig.18
ID
A
A
41
VGS=20V, Tc=100℃
ID(pulsed)
160
Pulse width tp limited by Tj,max
Fig.23
Fig.17
Power Dissipation
298
95
Tc=25°C , Tj = 150℃
Tc=110°C, Tj = 150℃
PTOT
W
Power Dissipation
Operating junction and Storage temperature range
Soldering temperature
Tj ,Tstg
TL
°C
°C
-55 to +150
260
1.6mm (0.063’’) from case for 10s
M3 screw Maximum of mounting
process: 3
Mounting torque
TM
Nm
0.6
1 / 9
Yangzhou Yangjie Electronic Technology Co., Ltd.
S-SIC070
Rev.1.0,23-Feb-23
www.21yangjie.com