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YJD212040NCFG1 PDF预览

YJD212040NCFG1

更新时间: 2024-11-17 17:02:11
品牌 Logo 应用领域
扬杰 - YANGJIE /
页数 文件大小 规格书
9页 1110K
描述
TO-247-4L

YJD212040NCFG1 数据手册

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RoHS  
YJD212040NCFG1  
COMPLIANT  
Silicon Carbide Power MOSFET N-Channel Enhancement)  
VDS  
1200V  
63A  
Features  
● High speed switching  
● Essentially no switching losses  
ID  
25°C  
RDS(on)  
40mΩ  
● Reduction of heat sink requirements  
● Maximum working temperature at 150 °C  
● High blocking voltege  
● Fast Intrinsic diode with low recovery current  
● High-frequency operation  
● Halogen free, RoHS compliant  
Typical Applications  
Typical applications are in power factor correction(PFC), solar  
inverter, uninterruptible power supply, motor drives, photovoltaic  
inverter, electric car and charger.  
Mechanical Data  
ackage: TO247-4L  
P
Terminals: Tin plated leads  
Polarity: As marked  
(T =25Unless otherwise specified  
Maximum Ratings  
C
PARAMTETER  
SYMBOL UNIT  
VALUE  
TEST CONDITIONS  
NOTE  
Device marking code  
D212040NCFG1  
Drain source voltage  
@ Tj=25°C  
VDS,max  
VGS,max  
VGS,op  
V
V
V
1200  
-10/+25  
-5/+20  
63  
VGS=0 V, ID=100uA  
Gate source voltage  
@ Tj=25°C  
Absolute maximum values  
Gate source voltage  
@ Tj=25°C  
Recommended operational values  
Note12  
VGS=20V, Tc=25  
Continuous drain current @ Tc=25°C  
Continuous drain current @ Tc=100°C  
Pulsed drain current  
Fig.18  
ID  
A
A
41  
VGS=20V, Tc=100℃  
ID(pulsed)  
160  
Pulse width tp limited by Tj,max  
Fig.23  
Fig.17  
Power Dissipation  
298  
95  
Tc=25°C , Tj = 150℃  
Tc=110°C, Tj = 150℃  
PTOT  
W
Power Dissipation  
Operating junction and Storage temperature range  
Soldering temperature  
Tj ,Tstg  
TL  
°C  
°C  
-55 to +150  
260  
1.6mm (0.063’’) from case for 10s  
M3 screw Maximum of mounting  
process: 3  
Mounting torque  
TM  
Nm  
0.6  
1 / 9  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
S-SIC070  
Rev.1.0,23-Feb-23  
www.21yangjie.com