Datasheet > YJD2120120NCFGHQ

YJD2120120NCFGHQ

更新时间： 2024-11-17 17:02:03

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
9页	803K
描述
TO-247-4L

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中文翻译

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数据手册

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YJD2120120NCFGHQ 数据手册

RoHS

YJD2120120NCFGHQ

COMPLIANT

Silicon Carbide Power MOSFET （N-Channel Enhancement）

V_DS

1200V

24A

Features

● High speed switching

● Essentially no switching losses

I_D

（

）

25°C

R_DS(on)

120mΩ

● Reduction of heat sink requirements

● Maximum working temperature at 175 °C

● High blocking voltage

● Fast Intrinsic diode with low recovery current

● High-frequency operation

● Halogen free, RoHS compliant

● AEC-Q101 qualified

Typical Applications

Typical applications are in power factor correction(PFC), solar

inverter, uninterruptible power supply, motor drives, photovoltaic

inverter, electric car and charger.

Mechanical Data

●

ackage: TO-247-4L

● Terminals: Tin plated leads

● Polarity: As marked

(T =25℃Unless otherwise specified

■

Maximum Ratings

）

PARAMTETER

SYMBOL UNIT

VALUE

TEST CONDITIONS

NOTE

Device marking code

D2120120NCFGH

Drain source voltage

@ T_j=25°C

V_DS,max

V_GS,max

V_GS,op

1200

V_GS=0 V, I_D=100uA

Gate source voltage

@ T_j=25°C

Absolute maximum values

(AC f > 1Hz, duty cycle < 1%)

-10/+25

-5/+20

Note1

Gate source voltage

@ T_j=25°C

Recommended operational values

V_GS=20V, Tc=25℃

Continuous drain current @ T_c=25°C

Continuous drain current @ T_c=110°C

Fig.14

Fig.15

I_D

16.5

_GS=20V, Tc=110℃

Pulse Drain Current

I_{D, pulse}

E_AS

_{Limited by}tpw

Avalanche energy, Single Pulse

Power Dissipation

625

V_DD=100V, I_D=7A

P_TOT

Tj ,Tstg

T_L

166

T_c=25°C , Tj = 175℃

Fig.13

Operating junction and Storage temperature range

Soldering temperature

°C

-55 to +175

260

0.6

1.6mm (0.063’’) from case for 10s

M3 screw Maximum of mounting

process: 3

Mounting torque

T_M

1 / 9

Yangzhou Yangjie Electronic Technology Co., Ltd.

S-SIC142

Rev.1.1,11-Dec-23

www.21yangjie.com

12 3 4 5 6 7...9

中文翻译

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