Datasheet > YJD18GP10AQ

YJD18GP10AQ

更新时间： 2024-11-17 15:19:19

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
7页	262K
描述
TO-252

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中文翻译

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数据手册

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YJD18GP10AQ 数据手册

RoHS

COMPLIANT

YJD18GP10AQ

P-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

-100V

● I_D

-18A

● R_DS(ON)( at V_GS=-10V)

● R_DS(ON)( at V_GS=-4.5V)

● 100% EAS Tested

● 100% ▽V^DSTested

＜110 mΩ

＜120 mΩ

General Description

● Split gate trench MOSFET technology

● Low R_DS(on)& FOM

● Extremely low switching loss

● Excellent stability and uniformity

● Part no. with suffix “Q” means AEC-Q101 qualified

Applications

● Power management

● Portable equipment

Absolute Maximum Ratings (T =25℃ unless otherwise noted)

■

Parameter

Symbol

Limit

-100

±20

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

-18

T_C=25℃

Drain Current

I_D

Tc=100℃

-12

Pulsed Drain Current ^A

Avalanche energy ^B

I_DM

-72

EAS

Tc=25℃

Total Power Dissipation ^C

P_D

Tc=100℃

Junction and Storage Temperature Range

T_J,T_STG

-55～+150

℃

■Thermal resistance

Parameter

Symbol

R_θJA

Typ

Max

Units

Thermal Resistance Junction-to-Ambient ^D

Thermal Resistance Junction-to-Case

Steady-State

℃/W

R_θJC

1.35

1.7

Ordering Information (Example)

■

PACKING

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON DELIVERY

PREFERED P/N

CODE

Marking

QUANTITY(pcs)

MODE

YJD18GP10AQ

YJD18GP10A

2500

5000

25000

13“ reel

1 / 7

S-B2414

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

Rev.1.4, 31-Oct-23

12 3 4 5 6 7

中文翻译

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