Datasheet > YJD15GP10HQ

YJD15GP10HQ

更新时间： 2024-09-27 17:02:11

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
9页	264K
描述
TO-252

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YJD15GP10HQ 数据手册

RoHS

COMPLIANT

YJD15GP10HQ

P-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

-100V

-15A

● I_D

● R_DS(ON)( at V_GS=-10V)

● 100% EAS Tested

● 100% ▽V^DSTested

＜120mΩ

General Description

● Split gate trench MOSFET technology

● Low R_DS(on)& FOM

● Extremely low switching loss

● Excellent stability and uniformity

● Moisture Sensitivity Level 1

● Part no. with suffix “Q” means AEC-Q101 qualified

Applications

● Power management

● Portable equipment

● 12V, 24V and 48V Automotive systems

Absolute Maximum Ratings (T =25℃ unless otherwise noted)

■

Parameter

Symbol

Limit

-100

±20

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

-2.5

-1.5

-15

T_A=25℃

T_A=100℃

T_C=25℃

Drain Current

I_D

Tc=100℃

-9.5

-35

Pulsed Drain Current ^A

Avalanche energy ^B

I_DM

EAS

1.4

T_A=25℃

T_A=100℃

Tc=25℃

Tc=100℃

0.5

Total Power Dissipation ^C

P_D

Junction and Storage Temperature Range

T_J,T_STG

-55～+150

℃

1 / 8

Yangzhou Yangjie Electronic Technology Co., Ltd.

S-B3118

Rev.1.1,28-Sep-23

www.21yangjie.com

12 3 4 5 6 7...9

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