RoHS
COMPLIANT
YJD13P06AJ
P-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
-60 V
● ID
-13 A
● RDS(ON)( at VGS=-10V)
● RDS(ON)( at VGS=-4.5V)
● 100% EAS Tested
● 100% ▽VDS Tested
<110 mΩ
<135 mΩ
General Description
● Trench Power LV MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low RDS(ON)
● Moisture Sensitivity Level 1
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
Applications
● Power switching application
● Uninterruptible power supply
● DC-DC convertor
Absolute Maximum Ratings (T =25℃ unless otherwise noted)
■
A
Parameter
Symbol
Limit
-60
Unit
V
Drain-source Voltage
Gate-source Voltage
VDS
VGS
±20
-3
V
TA=25℃
-2.1
-13
TA=100℃
TC=25℃
Drain Current
ID
A
-8.2
-30
TC =100℃
Pulsed Drain Current A
Avalanche energy B
IDM
A
EAS
25
mJ
2.5
TA=25℃
TA=100℃
TC=25℃
TC =100℃
1.25
33
Total Power Dissipation C
PD
W
16
Junction and Storage Temperature Range
TJ ,TSTG
-55~+175
℃
■Thermal resistance
Parameter
Symbol
RθJA
Typ
47
Max
60
Units
Thermal Resistance Junction-to-Ambient D
Thermal Resistance Junction-to-Case
Steady-State
Steady-State
℃/W
RθJC
3.6
4.5
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY
MODE
PREFERED P/N
Marking
CODE
YJD13P06AJ
F1/F2
YJD13P06AJ
2500
/
25000
13”Reel
1 / 7
S-E504
Rev.1.0,5-Feb-24
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com