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YJD13P06AJ PDF预览

YJD13P06AJ

更新时间: 2024-09-27 18:09:23
品牌 Logo 应用领域
扬杰 - YANGJIE /
页数 文件大小 规格书
7页 644K
描述
TO-252

YJD13P06AJ 数据手册

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RoHS  
COMPLIANT  
YJD13P06AJ  
P-Channel Enhancement Mode Field Effect Transistor  
Product Summary  
VDS  
-60 V  
ID  
-13 A  
RDS(ON)( at VGS=-10V)  
RDS(ON)( at VGS=-4.5V)  
100% EAS Tested  
100% VDS Tested  
110 mΩ  
135 mΩ  
General Description  
Trench Power LV MOSFET technology  
Excellent package for heat dissipation  
High density cell design for low RDS(ON)  
Moisture Sensitivity Level 1  
● Epoxy Meets UL 94 V-0 Flammability Rating  
● Halogen Free  
Applications  
Power switching application  
Uninterruptible power supply  
DC-DC convertor  
Absolute Maximum Ratings (T =25unless otherwise noted)  
A
Parameter  
Symbol  
Limit  
-60  
Unit  
V
Drain-source Voltage  
Gate-source Voltage  
VDS  
VGS  
±20  
-3  
V
TA=25  
-2.1  
-13  
TA=100℃  
TC=25℃  
Drain Current  
ID  
A
-8.2  
-30  
TC =100℃  
Pulsed Drain Current A  
Avalanche energy B  
IDM  
A
EAS  
25  
mJ  
2.5  
TA=25℃  
TA=100℃  
TC=25℃  
TC =100℃  
1.25  
33  
Total Power Dissipation C  
PD  
W
16  
Junction and Storage Temperature Range  
TJ ,TSTG  
-55+175  
Thermal resistance  
Parameter  
Symbol  
RθJA  
Typ  
47  
Max  
60  
Units  
Thermal Resistance Junction-to-Ambient D  
Thermal Resistance Junction-to-Case  
Steady-State  
Steady-State  
/W  
RθJC  
3.6  
4.5  
Ordering Information (Example)  
PACKING  
MINIMUM  
PACKAGE(pcs)  
INNER BOX  
QUANTITY(pcs)  
OUTER CARTON  
QUANTITY(pcs)  
DELIVERY  
MODE  
PREFERED P/N  
Marking  
CODE  
YJD13P06AJ  
F1/F2  
YJD13P06AJ  
2500  
/
25000  
13”Reel  
1 / 7  
S-E504  
Rev.1.0,5-Feb-24  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
www.21yangjie.com