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YJD130G04H PDF预览

YJD130G04H

更新时间: 2024-11-17 15:19:51
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扬杰 - YANGJIE /
页数 文件大小 规格书
7页 469K
描述
TO-252

YJD130G04H 数据手册

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RoHS  
COMPLIANT  
YJD130G04H  
N-Channel Enhancement Mode Field Effect Transistor  
Product Summary  
VDS  
40V  
ID  
130A  
RDS(ON)( at VGS=10V)  
100% EAS Tested  
100% VDS Tested  
2.5mΩ  
General Description  
Split gate trench MOSFET technology  
Excellent package for heat dissipation  
High density cell design for low RDS(ON)  
● Moisture Sensitivity Level 1  
● Epoxy Meets UL 94 V-0 Flammability Rating  
● Halogen Free  
Applications  
Power switching application  
Uninterruptible power supply  
DC-DC convertor  
Absolute Maximum Ratings (T =25unless otherwise noted)  
A
Parameter  
Symbol  
Limit  
40  
Unit  
V
Drain-source Voltage  
Gate-source Voltage  
VDS  
VGS  
±20  
29  
V
TA=25  
21  
TA=100℃  
TC=25℃  
TC=100℃  
Drain Current  
ID  
A
130  
92  
Pulsed Drain Current A  
Avalanche energy B  
IDM  
390  
676  
3.7  
A
EAS  
mJ  
TA=25℃  
TA=100℃  
TC=25℃  
TC=100℃  
1.8  
Total Power Dissipation C  
PD  
W
125  
62  
Junction and Storage Temperature Range  
TJ ,TSTG  
-55+175  
Thermal resistance  
Parameter  
Symbol  
RθJA  
Typ  
33  
Max  
40  
Units  
Thermal Resistance Junction-to-Ambient D  
Thermal Resistance Junction-to-Case  
Steady-State  
Steady-State  
/W  
RθJC  
1.0  
1.2  
Ordering Information (Example)  
PACKING  
MINIMUM  
PACKAGE(pcs)  
INNER BOX  
QUANTITY(pcs)  
OUTER CARTON  
QUANTITY(pcs)  
DELIVERY  
MODE  
PREFERED P/N  
Marking  
CODE  
YJD130G04H  
F1/F2  
YJD130G04H  
2500  
/
25000  
13”Reel  
1 / 7  
S-E386  
Rev.1.0, 25-Aug-23  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
www.21yangjie.com