RoHS
COMPLIANT
YJD130G04H
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
40V
● ID
130A
● RDS(ON)( at VGS=10V)
● 100% EAS Tested
● 100% ▽VDS Tested
<2.5mΩ
General Description
● Split gate trench MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low RDS(ON)
● Moisture Sensitivity Level 1
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
Applications
● Power switching application
● Uninterruptible power supply
● DC-DC convertor
Absolute Maximum Ratings (T =25℃ unless otherwise noted)
■
A
Parameter
Symbol
Limit
40
Unit
V
Drain-source Voltage
Gate-source Voltage
VDS
VGS
±20
29
V
TA=25℃
21
TA=100℃
TC=25℃
TC=100℃
Drain Current
ID
A
130
92
Pulsed Drain Current A
Avalanche energy B
IDM
390
676
3.7
A
EAS
mJ
TA=25℃
TA=100℃
TC=25℃
TC=100℃
1.8
Total Power Dissipation C
PD
W
125
62
Junction and Storage Temperature Range
TJ ,TSTG
-55~+175
℃
■Thermal resistance
Parameter
Symbol
RθJA
Typ
33
Max
40
Units
Thermal Resistance Junction-to-Ambient D
Thermal Resistance Junction-to-Case
Steady-State
Steady-State
℃/W
RθJC
1.0
1.2
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY
MODE
PREFERED P/N
Marking
CODE
YJD130G04H
F1/F2
YJD130G04H
2500
/
25000
13”Reel
1 / 7
S-E386
Rev.1.0, 25-Aug-23
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com