Datasheet > YJD120N04A

YJD120N04A

更新时间： 2024-03-03 10:11:24

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
7页	931K
描述
TO-252

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中文翻译

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数据手册

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YJD120N04A 数据手册

RoHS

COMPLIANT

YJD120N04A

N-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

40 V

● I_D

120 A

● R_DS(ON)( at V_GS=10V)

● R_DS(ON)( at V_GS=4.5V)

● 100% EAS Tested

● 100% ▽VDS Tested

＜3.5 mohm

＜4.8 mohm

General Description

● Trench Power LV MOSFET technology

● Excellent package for heat dissipation

● High density cell design for low R_DS(ON)

● Moisture Sensitivity Level 1

● Epoxy Meets UL 94 V-0 Flammability Rating

● Halogen Free

Applications

● DC-DC Converters

● Power management functions

● Backlighting

Absolute Maximum Ratings (T =25℃unless otherwise noted)

■

Parameter

Symbol

Limit

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

±20

120

T_C=25℃

T_C=100℃

Drain Current

I_D

Pulsed Drain Current ^A

I_DM

P_D

390

Total Power Dissipation @ T_C=25℃ ^B

Total Power Dissipation @ T_C=100℃ ^B

Total Power Dissipation @ T_A=25℃ ^C

Single Pulse Avalanche Energy ^D

110

P_D

6.2

E_AS

272

℃/ W

℃

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Ambient

Junction and Storage Temperature Range

R_θJC

R_θJA

T_J,T_STG

1.14

-55～+150

Ordering Information (Example)

■

PACKING

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

PREFERED P/N

Marking

DELIVERY MODE

CODE

YJD120N04A

F1/F2

YJD120N04A

2500

25000

13“ reel

1 / 7

S-E099

Rev.3.1,26-May-23

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

12 3 4 5 6 7

中文翻译

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