Datasheet > YJD112040NCTQG3

YJD112040NCTQG3

更新时间： 2024-11-16 18:09:59

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
6页	711K
描述
TO-247AB

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中文翻译

获取价格

数据手册

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YJD112040NCTQG3 数据手册

RoHS

YJD112040NCTQG3

COMPLIANT

Silicon Carbide Schottky Diode

Features

V_RRM

1200V

● Positive temperature coefficient

I_F

40A⁽²⁾

（

）

135°C

● Temperature-independent switching

● Maximum working temperature at 175 °C

● Unipolar devices and zero reverse recovery current

● Zero forward recovery current

Q_C

182nC⁽²⁾

● Essentially no switching losses

● Reduction of heat sink requirements

● High-frequency operation

● Reduction of EMI

Typical Applications

Typical applications are in power factor correction(PFC), solar

inverter, uninterruptible power supply, motor drives, photovoltaic

inverter, electric car and charger.

Mechanical Data

●

ackage: TO-247AB

Molding compound meets UL 94 V-0 flammability

rating, RoHS-compliant, halogen-free

● Terminals: Tin plated leads

● Polarity: As marked

(T_C=25℃Unless otherwise specified

■

Maximum Ratings

)

PARAMTETER

SYMBOL

UNIT

VALUE

D112040NCTQG3

1200

Device marking code

Reverse voltage (Repetitive peak)

@ T_j=25°C

V_RRM

V_RSM

V_DC

Reverse voltage (Surge peak)

@ T_j=25°C

1200

Reverse voltage (DC)

@ T_j=25°C

1200

Continuous forward current @ T_C=25°C

Continuous forward current @ T_C=135°C

43/86

I_F

20/40

Non-repetitive peak forward surge current

@ T_C=25°C, tp=10ms, Half Sine Wave

I_FSM

160⁽¹⁾

Power Dissipation@ T_C=25°C

164/326

71/141

P_TOT

Power Dissipation@ T_C=110°C

i²t Value@ T_C=25°C ,tp=10ms

∫i²dt

A²S

°C

128⁽¹⁾

Operating junction and Storage temperature range

T_j,T_stg

-55 to +175

⁽¹⁾Per Leg, ⁽²⁾Per Device

1 / 6

S-SIC169

Rev.1.0,06-Mar-24

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

12 3 4 5 6

中文翻译

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