RoHS
YJD112030NCTGG2
COMPLIANT
Silicon Carbide Schottky Diode
Features
● Positive temperature coefficient
VRRM
1200V
IF
62A**
(
)
● Temperature-independent switching
135°C
● Maximum working temperature at 175 °C
QC
220nC**
● Unipolar devices and zero reverse recovery current
● Zero forward recovery current
● Essentially no switching losses
● Reduction of heat sink requirements
● High-frequency operation
● Reduction of EMI
Typical Applications
Typical applications are in power factor correction(PFC), solar
inverter, uninterruptible power supply, motor drives, photovoltaic
inverter, electric car and charger.
Mechanical Data
●
ackage: TO-247AB
P
● Terminals: Tin plated leads
● Polarity: As marked
(T =25℃Unless otherwise specified
■
Maximum Ratings
)
C
PARAMTETER
SYMBOL
UNIT
VALUE
D112030NCTGG2
1200
Device marking code
Reverse voltage (repetitive peak)
@ Tj=25°C
VRRM
VRSM
VDC
V
V
V
Reverse voltage (Surge Peak)
@ Tj=25°C
1200
Reverse voltage (DC)
@ Tj=25°C
1200
Continuous forward current @ Tc=25°C
66/132
31/62
15/30
(Per Leg/Device)
Tc=135°C
Tc=161°C
IF
A
Non-repetitive peak forward surge current
@ Tc=25°C, tp=10ms, Half Sine Wave
IFSM
PTOT
A
W
140*
Power Dissipation@ Tc=25°C
(Per Leg/Device) Tc=110°C
294/588
127/254
i2t Value@ Tc=25°C ,tp=10ms
∫i2dt
Tj ,Tstg
A2 S
°C
98*
Operating junction and Storage temperature range
-55 to +175
* Per Leg, ** Per Device
1 / 6
S-SIC033
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
Rev.1.0,30-Apr-22