RoHS
YJD112015PGG2
COMPLIANT
Silicon Carbide Schottky Diode
Features
VRRM
1200V
● Positive temperature coefficient
IF
28A
(
)
135°C
● Temperature-independent switching
● Maximum working temperature at 175 °C
QC
114nC
● Unipolar devices and zero reverse recovery current
● Zero forward recovery current
● Essentially no switching losses
● Reduction of heat sink requirements
● High-frequency operation
● Reduction of EMI
Typical Applications
Typical applications are in power factor correction(PFC), solar
inverter, uninterruptible power supply, motor drives, photovoltaic
inverter, electric car and charger.
Mechanical Data
●
ackage: TO-220AC
P
● Terminals: Tin plated leads
● Polarity: As marked
(T =25℃Unless otherwise specified
■
Maximum Ratings
)
C
PARAMTETER
SYMBOL
UNIT
VALUE
Device marking code
D112015PGG2
Reverse voltage (repetitive peak)
@ Tj=25°C
VRRM
VRSM
VDC
V
V
V
1200
1200
1200
61
Reverse voltage (Surge Peak)
@ Tj=25°C
Reverse voltage (DC)
@ Tj=25°C
Continuous forward current @ Tc=25°C
Continuous forward current @ Tc=135°C
Continuous forward current @ Tc=158°C
IF
A
28
15
Non-repetitive peak forward surge current
@ Tc=25°C, tp=10ms, Half Sine Wave
IFSM
A
140
Power Dissipation@ Tc=25°C
241
PTOT
W
Power Dissipation@ Tc=110°C
104
i2t Value@ Tc=25°C ,tp=10ms
∫i2dt
A2 S
°C
98
Operating junction and Storage temperature range
Tj ,Tstg
-55 to +175
1 / 5
S-SIC106
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
Rev.1.0,17-Nov-23