Datasheet > YJD112010BQG2

YJD112010BQG2

更新时间： 2024-11-16 15:19:35

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
5页	425K
描述
TO-263

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中文翻译

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数据手册

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YJD112010BQG2 数据手册

RoHS

YJD112010BQG2

COMPLIANT

Silicon Carbide Schottky Diode

Features

● Positive temperature coefficient

V_RRM

1200V

I_F

14A

（

）

● Temperature-independent switching

135°C

● Maximum working temperature at 175 °C

Q_C

53nC

● Unipolar devices and zero reverse recovery current

● Zero forward recovery current

● Essentially no switching losses

● Reduction of heat sink requirements

● High-frequency operation

● Reduction of EMI

Typical Applications

Typical applications are in power factor correction(PFC), solar

inverter, uninterruptible power supply, motor drives, photovoltaic

inverter, electric car and charger.

Mechanical Data

●

ackage: TO-263

● Terminals: Tin plated leads

● Polarity: As marked

(T =25℃Unless otherwise specified

■

Maximum Ratings

）

PARAMTETER

SYMBOL

UNIT

VALUE

Device marking code

D112010BQG2

Reverse voltage (repetitive peak)

@ T_j=25°C

V_RRM

V_RSM

V_DC

1200

Reverse voltage (Surge Peak)

@ T_j=25°C

Reverse voltage (DC)

@ T_j=25°C

Continuous forward current @ T_c=25°C

Continuous forward current @ T_c=135°C

Continuous forward current @ T_c=141°C

I_F

Non-repetitive peak forward surge current

@ T_c=25°C, tp=10ms, Half Sine Wave

I_FSM

Power Dissipation@ T_c=25°C

158

P_TOT

Power Dissipation@ T_c=110°C

i²t Value@ Tc=25°C ,tp=10ms

∫i²dt

A²S

°C

Operating junction and Storage temperature range

T_j,T_stg

-55 to +175

1 / 5

S-SIC059

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

Rev.1.0,14-Nov-22

12 3 4 5

中文翻译

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