Datasheet > YJD112008DQG3

YJD112008DQG3

更新时间： 2024-09-25 18:09:11

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
5页	653K
描述
TO-252

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中文翻译

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数据手册

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YJD112008DQG3 数据手册

RoHS

YJD112008DQG3

Silicon Carbide Schottky Diode

Features

COMPLIANT

V_RRM

1200V

● Positive temperature coefficient

● Temperature-independent switching

● Maximum working temperature at 175 °C

● Unipolar devices and zero reverse recovery current

I_F

12A

（

）

135°C

Q_C

37nC

● Zero forward recovery current

● Essentially no switching losses

● Reduction of heat sink requirements

● High-frequency operation

● Reduction of EMI

Typical Applications

Typical applications are in power factor correction(PFC), solar

inverter, uninterruptible power supply, motor drives, photovoltaic

inverter, electric car and charger.

Mechanical Data

●

ackage: TO-252

Molding compound meets UL 94 V-0 flammability

rating, RoHS-compliant, halogen-free

● Terminals: Tin plated leads

● Polarity: As marked

(T_C=25℃Unless otherwise specified

■

Maximum Ratings

）

PARAMTETER

SYMBOL

UNIT

VALUE

Device marking code

D112008DQG3

Reverse voltage (repetitive peak)

@ T_j=25°C

V_RRM

V_RSM

V_DC

1200

Reverse voltage (Surge Peak)

@ T_j=25°C

1200

Reverse voltage (DC)

@ T_j=25°C

1200

Continuous forward current @ T_C=25°C

Continuous forward current @ T_C=135°C

Continuous forward current @ T_C=154°C

I_F

Non-repetitive peak forward surge current

@ T_C=25°C, tp=10ms, Half Sine Wave

I_FSM

126

Power Dissipation@ T_C=25°C

P_TOT

Power Dissipation@ T_C=110°C

i²t Value@ T_C=25°C ,tp=10ms

∫i²dt

A²S

°C

Operating junction and Storage temperature range

T_j,T_stg

-55 to +175

1 / 5

S-SIC162

Rev.1.0,06-Mar-24

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

12 3 4 5

中文翻译

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