RoHS
YJD106550NQG3
COMPLIANT
Silicon Carbide Schottky Diode
Features
● Positive temperature coefficient
VRRM
650V
IF
56A
(
)
● Temperature-independent switching
● Maximum working temperature at 175 °C
● Unipolar devices and zero reverse recovery current
● Zero forward recovery voltage
135°C
QC
135nC
● Essentially no switching losses
● Reduction of heat sink requirements
● High-frequency operation
● Reduction of EMI
Typical Applications
Typical applications are in power factor correction(PFC), solar
inverter, uninterruptible power supply, motor drives, photovoltaic
inverter, electric car and charger.
Mechanical Data
●
ackage: TO-247AC
P
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant, halogen-free
● Terminals: Tin plated leads
● Polarity: As marked
T =25℃Unless otherwise specified
)
■
(
Maximum Ratings
C
PARAMTETER
SYMBOL
UNIT
VALUE
Device marking code
D106550NQG3
Reverse voltage (repetitive peak)
@ Tj=25°C
VRRM
VRSM
VDC
V
V
V
650
650
Reverse voltage (Surge Peak)
@ Tj=25°C
Reverse voltage (DC)
@ Tj=25°C
650
Continuous forward current @ Tc=25°C
Continuous forward current @ Tc=135°C
Continuous forward current @ Tc=143°C
119
IF
A
56
50
Non-repetitive peak forward surge current
@ Tc=25°C, tp=10ms, Half Sine Wave
IFSM
A
380
Power Dissipation@ Tc=25°C
454
PTOT
W
Power Dissipation@ Tc=110°C
196
i2t Value@ Tc=25°C ,tp=10ms
∫i2dt
A2 S
°C
722
Operating junction and Storage temperature range
Tj ,Tstg
-55 to +175
1 / 5
S-SIC094
Rev.1.0,17-May-23
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com