RoHS
YJD106520NCTQG3
COMPLIANT
COMPLIANT
Silicon Carbide Schottky Diode
Features
VRRM
650V
● Positive temperature coefficient
IF
20A(2)
(
)
● Temperature-independent switching
135°C
● Maximum working temperature at 175 °C
50nC(2)
QC
● Unipolar devices and zero reverse recovery current
● Zero forward recovery voltage
● Essentially no switching losses
● Reduction of heat sink requirements
● High-frequency operation
● Reduction of EMI
Typical Applications
Typical applications are in power factor correction(PFC), solar
inverter, uninterruptible power supply, motor drives, photovoltaic
inverter, electric car and charger.
Mechanical Data
●
ackage: TO-247AB
P
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant, halogen-free
● Terminals: Tin plated leads
● Polarity: As marked
T =25℃Unless otherwise specified
)
■
(
Maximum Ratings
C
PARAMTETER
SYMBOL
UNIT
VALUE
D106520NCTQG3
650
Device marking code
Reverse voltage (repetitive peak)
@ Tj=25°C
VRRM
VRSM
VDC
V
V
V
Reverse voltage (Surge Peak)
@ Tj=25°C
650
Reverse voltage (DC)
@ Tj=25°C
650
Continuous forward current @ Tc=25°C
Continuous forward current @ Tc=135°C
21/42
IF
A
A
10/20
Non-repetitive peak forward surge current
@ Tc=25°C, tp=10ms, Half Sine Wave
70(1)
IFSM
Power Dissipation@ Tc=25°C
84/166
36/72
PTOT
W
Power Dissipation@ Tc=110°C
i2t Value@ Tc=25°C ,tp=10ms
∫i2dt
A2 S
°C
24(1)
Operating junction and Storage temperature range
Tj ,Tstg
-55 to +175
(1) Per Leg, (2) Per Device
1 / 6
S-SIC104
Rev.1.0,06-Nov-23
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com