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YJD106510FQG2 PDF预览

YJD106510FQG2

更新时间: 2024-04-09 19:00:41
品牌 Logo 应用领域
扬杰 - YANGJIE /
页数 文件大小 规格书
5页 560K
描述
ITO-220AC

YJD106510FQG2 数据手册

 浏览型号YJD106510FQG2的Datasheet PDF文件第2页浏览型号YJD106510FQG2的Datasheet PDF文件第3页浏览型号YJD106510FQG2的Datasheet PDF文件第4页浏览型号YJD106510FQG2的Datasheet PDF文件第5页 
RoHS  
YJD106510FQG2  
COMPLIANT  
Silicon Carbide Schottky Diode  
Features  
● Positive temperature coefficient  
VRRM  
650V  
IF  
10A  
Temperature-independent switching  
● Maximum working temperature at 175 °C  
● Unipolar devices and zero reverse recovery current  
● Zero forward recovery current  
110°C  
QC  
30nC  
● Essentially no switching losses  
● Reduction of heat sink requirements  
● High-frequency operation  
● Reduction of EMI  
Typical Applications  
Typical applications are in power factor correction(PFC), solar  
inverter, uninterruptible power supply, motor drives, photovoltaic  
inverter, electric car and charger.  
Mechanical Data  
ackage: ITO-220AC  
P
Molding compound meets UL 94 V-0 flammability  
rating, RoHS-compliant, halogen-free  
Terminals: Tin plated leads  
Polarity: As marked  
T =25Unless otherwise specified  
)
(
Maximum Ratings  
C
PARAMTETER  
SYMBOL  
UNIT  
VALUE  
Device marking code  
D106510FQG2  
Reverse voltage (repetitive peak)  
@ Tj=25°C  
VRRM  
VRSM  
VDC  
V
V
V
650  
Reverse voltage (Surge Peak)  
@ Tj=25°C  
650  
Reverse voltage (DC)  
@ Tj=25°C  
650  
Continuous forward current @ Tc=25°C  
Continuous forward current @ Tc=110°C  
16  
IF  
A
A
10  
Non-repetitive peak forward surge current  
@ Tc=25°C, tp=10ms, Half Sine Wave  
IFSM  
80  
Power Dissipation@ Tc=25°C  
43  
19  
PTOT  
W
Power Dissipation@ Tc=110°C  
i2t Value@ Tc=25°C ,tp=10ms  
∫i2dt  
A2 S  
°C  
32  
Operating junction and Storage temperature range  
Tj ,Tstg  
-55 to +175  
1 / 5  
S-SIC051  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
www.21yangjie.com  
Rev.1.0,14-Nov-22  

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