Datasheet > YJ4N80CH

YJ4N80CH

更新时间： 2024-11-16 02:51:27

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
10页	1179K
描述
N-CHANNEL ENHANCEMENT MODE MOSFET

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中文翻译

获取价格

数据手册

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YJ4N80CH 数据手册

RoHS

N-CHANNEL ENHANCEMENT MODE MOSFET

COMPLIANT

YJ4N80

Feature:



Low Crss

Low Gate Charge

Fast Switching

Improved ESD Capability

Improved dv/dt Capability

100% Avalanche Energy Test

Mechanical Data:



Package： MOS

Molding compound meets UL 94 V-0 flammability rating,

RoHS-compliant



Terminal：Tin plated leads，

Solderable per J-STD-002 and JESD22-B102

Polarity： As marked on body

Ordering Information

■

PACKING

CODE

MINIIMUM

INNER BOX OUTER CARTON DELIVERY

P/N

PACKAGE

UNIT WEIGHT(g)

PACKAGE(pcs)QUANTITY(pcs) QUANTITY(pcs)

MODE

ITO-220AB

TO-220AB

TO-263

Approximate 1.7

Approximate 2.0

Approximate 1.4

Approximate 0.4

1000

4500

5000

TUBE

YJ4N80CI

YJ4N80CZ

YJ4N80CM

YJ4N80CH

YJ4N80CP

TUBE

5000

TO-251

22500

25000

TO-252

2500

(T =25℃ Unless otherwise specified

■

Maximum Ratings

)

Parameter

Symbol

Value

Unit

V_DSS

800

3.7*

2.2*

Drain-Source Voltage

Tc=25℃

I_D

Continues Drain Current

Tc=100℃

I_DM

V_GS

E_AS

Plused Drain Current (note 1)

Gate-to-Source Voltage

±30

218

Single Pulsed Avalanche Energy (note 2)

1 / 10

(编号 Arail 10.5)

(版本号，日期)

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

12 3 4 5 6 7...10

中文翻译

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