Datasheet > YED16C26T120G

YED16C26T120G

更新时间： 2025-07-19 18:54:11

品牌	Logo	应用领域
元耀 - YENYO		/
页数	文件大小	规格书
3页	347K
描述
Family : ESD; Status : Active; Package : DFN1610-2; Configuration : Bi-Dir; AEC-Q101 : No; VRWM (V) : 6.8; IR Max. (μA) : 1; VBR Min. (V) : 7.2; CJ Typ. (pF) : 400; IPP @ 8/20μs (A) : 120; PPP (W) : 1800;

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YED16C26T120G 数据手册

YED16C26T120G

ESD Protection Diode

YENYO

Features

■ 1800 Watts peak pulse power (Tp = 8/20μs)

■ DFN1610-2 package

■ Bidirectional configurations

■ Solid-state silicon-avalanche technology

■ Low clamping voltage

■ Low leakage current

■ Normal capacitance (Cj=400pF)

■ Protection one data/power line to:

IEC 61000-4-2 ±30kV contact ±30kV air

IEC 61000-4-4 (EFT) 40A (5/50ns)

IEC 61000-4-5 (Lightning) 120A (8/20 μs)

Mechanical Data

Applications

■

Charager Protection

Case: DFN1610-2 (plastic package)

Lead free; RoHS compliant; Halogen free

■

Parallel & Serial Port Protection

Personal Digital Assistant (PDA)

Microcontroller Input Protection

Cellular Phones

■

Molding Compound Flammability Rating:

UL 94 V-0

■

Terminals: High temperature soldering guaranteed:

260 °C/10 sec. at terminals

I²C Bus Protection

Absolute Maximum Ratings

Ratings at 25 °C, ambient temperature unless otherwise specified

Parameter

Symbol

Value

Unit

Peak Pulse Power (T_P=8/20μS)

ESD contact/air discharge (IEC-61000-4-2)

Peak Pulse Current ( tP = 8/20μS )

Junction Temperature

P_PP

V_ESD

I_PP

1800

30/30

120

T_J

-55 to +150

℃

Storage temperature

T_STG

Electrical Characteristics

(T_A= 25 °C unless otherwise specified)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Reverse stand-off Voltage

Reverse Breakdown Voltage

Reverse Leakage Current

Clamping Voltage (IEC 61000-4-5)

Junction Capacitance

V_RWM

V_BR

I_R

6.8

I_T=1mA

_VR=6.8V

7.2

V_C

I_PP=120A

C_J

V_R=0V, f=1MHz

400

1 / 3

12 3

中文翻译

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