RoHS
YBSMU10008
COMPLIANT
Low VF Bridge Rectifiers
Features
● UL recognition, file #E313149
● based on silicon planar process
● Low VF
● Ideal for automated placement
● High surge current capability
● Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
Typical Applications
General purpose use in AC/DC bridge full wave rectification for
SMPS, lighting ballaster, adapter, battery charger, home
appliances, office equipment, and telecommunication
applications.
Mechanical Data
●
ackage: YBS3
P
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant, Halogen-free
● Terminals: Tin plated leads, solderable per
J-STD-002 and JESD22-B102
●
As marked on body
Polarity:
(T =25℃Unless otherwise specified
■
Maximum Ratings
)
a
YBSMU10008
PARAMETER
SYMBOL
UNIT
YBSMU10008
Device marking code
V
V
V
V
A
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
800
560
800
RRM
V
RMS
V
Maximum DC blocking Voltage
DC
Average rectified output current
@60Hz sine wave, R-load, Tc=100℃
IO
10
Forward Surge Current (Non-repetitive)
@60Hz Half-sine wave,1 cycle, Tj=25℃
Forward Surge Current (Non-repetitive)
200
400
I
A
FSM
@1ms, square wave, 1 cycle, Tj=25℃
Current squared time
@1ms≤t≤8.3ms Tj=25℃,Rating of per diode
A2s
I2t
166
T
Storage temperature
Junction temperature
-55 ~ +150
stg
℃
℃
T
j
-55 ~ +150
(T =25℃Unless otherwise specified)
■Electrical Characteristics
a
PARAMETER
SYMBOL
UNIT
TEST CONDITIONS
Min
Typ
Max
0.88
5
Instantaneous forward voltage drop per
diode
V
F
V
0.7
0.855
0.002
3.0
I
=5A
FM
-
-
T =25℃
j
DC reverse current at rated DC blocking
voltage per diode
I
μA
pF
R
Tj =125℃
50
Measured at 1MHz and
Applied Reverse Voltage
of 4.0 V.D.C
Junction capacitance
Cj
45
90
180
1 / 4
S-B3352
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
Rev.1.0,28-Mar-24