Datasheet > XZTNI53W-8

XZTNI53W-8

更新时间： 2024-09-21 22:59:35

品牌	Logo	应用领域
SUNLED		光电
页数	文件大小	规格书
4页	238K
描述
EMITTER IR 940NM 50MA SMD

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中文翻译

获取价格

技术参数
数据手册

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XZTNI53W-8 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	2.2	光电设备类型：	INFRARED LED
Base Number Matches：	1

XZTNI53W-8 数据手册

Part Number: XZTNI53W-8

1.6x0.8mm Infrared Emitting Diode

Features

Package Schematics

● Ideal for indication light on hand held products

● Long life and robust package

● Standard Package: 2,000pcs/ Reel

● MSL (Moisture Sensitivity Level): 3

● RoHS compliant

Notes:

1. All dimensions are in millimeters (inches).

2. Tolerance is ±0.15(0.006") unless otherwise noted.

3. Specifications are subject to change without notice.

Absolute Maximum Ratings

(T_A=25°C)

TNI

(GaAs)

Operating Characteristics

(T_A=25°C)

TNI

(GaAs)

Unit

Reverse Voltage

Forward Current

V_R

I_F

Forward Voltage (Typ.)

(I_F=20mA)

V_F

I_R

1.2

1.6

Forward Voltage (Max.)

(I_F=20mA)

Forward Current (Peak)

1/100 Duty Cycle

10us Pulse Width

i_FS

1200

Reverse Current (Max.)

(V_R=5V)

Power Dissipation

P_D

T_A

°C

Wavelength of Peak

Emission CIE127-2007* (Typ.)

(I_F=20mA)

Operating Temperature

Storage Temperature

-40 ~ +85

λP

940*

Tstg

Spectral Line Full Width

At Half-Maximum (Typ.)

(I_F=20mA)

A Relative Humidity between 40% and 60% is recommended in

ESD-protected work areas to reduce static build up during assembly

process (Reference JEDEC/JESD625-A and JEDEC/J-STD-033)

△λ

Capacitance (Typ.)

(V_F=0V, f=1MHz)

Radiant Intensity

CIE127-2007*

(Po₌mW/sr)

Wavelength

CIE127-2007*

Viewing

Angle

2θ 1/2

Part

Number

Emitting

Material

Lens-color

λP

@20mA

min.

typ.

1.2*

4.8

2.8*

XZTNI53W-8

GaAs

Water Clear

940*

60°

*Radiant intensity value and wavelength are in accordance with CIE127-2007 standards.

Feb 09,2017

XDSB8903 V1-X Layout: Maggie L.

P. 1/4

12 3 4

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