Datasheet > XZTNI53W-1

XZTNI53W-1

更新时间： 2024-11-05 22:57:47

品牌	Logo	应用领域
SUNLED		/
页数	文件大小	规格书
4页	248K
描述
EMITTER IR 940NM 50MA SMD

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中文翻译

获取价格

数据手册

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XZTNI53W-1 数据手册

Part Number: XZTNI53W-1

1.6 x 0.8 mm Infrared Emitting Diode

Features

Package Schematics

● Long life and robust package

● Standard Package: 2,000pcs/ Reel

● MSL (Moisture Sensitivity Level): 3

● Halogenꢀfree

● RoHS compliant

Notes:

1. All dimensions are in millimeters (inches).

2. Tolerance is ±0.1(0.004") unless otherwise noted.

3. Specifications are subject to change without notice.

Absolute Maximum Ratings

(T_A=25°C)

TNI

(GaAs)

Operating Characteristics

(T_A=25°C)

TNI

(GaAs)

Unit

Forward Voltage (Typ.)

(I_F=20mA)

Reverse Voltage

Forward Current

V_R

V_F

I_R

1.2

1.6

I_F

Forward Voltage (Max.)

(I_F=20mA)

Forward Current (Peak)

1/100 Duty Cycle

10us Pulse Width

i_FS

1200

°C

Reverse Current (Max.)

(V_R=5V)

ꢁA

Power Dissipation

P_D

T_A

Wavelength of Peak

Emission CIE127ꢀ2007* (Typ.)

(I_F=20mA)

λP

940*

Operating Temperature

Storage Temperature

ꢀ40 ~ +85

Tstg

Spectral Line Full Width

At HalfꢀMaximum (Typ.)

(I_F=20mA)

△λ

A Relative Humidity between 40% and 60% is recommended in

ESDꢀprotected work areas to reduce static build up during assembly

process (Reference JEDEC/JESD625ꢀA and JEDEC/JꢀSTDꢀ033)

Capacitance (Typ.)

(V_F=0V, f=1MHz)

Radiant Intensity

CIE127ꢀ2007*

(Po₌mW/sr)

Wavelength

CIE127ꢀ2007*

Viewing

Angle

2θ 1/2

Part

Number

Emitting

Material

Lensꢀcolor

λP

@20mA

min.

typ.

1.2

0.8*

2.8

1.8*

XZTNI53Wꢀ1

GaAs

Water Clear

940*

150°

*Radiant Intensity value and wavelength are in accordance with CIE127ꢀ2007 standards.

Dec 07,2020

XDSA8991 V5ꢀX Layout: Maggie L.

P. 1/4

12 3 4

中文翻译

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