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XVT9007 PDF预览

XVT9007

更新时间: 2024-11-05 12:23:47
品牌 Logo 应用领域
RFM 振荡器晶体振荡器温度补偿
页数 文件大小 规格书
3页 453K
描述
Voltage Controlled Temperature Compensated Crystal Oscillator

XVT9007 数据手册

 浏览型号XVT9007的Datasheet PDF文件第2页浏览型号XVT9007的Datasheet PDF文件第3页 
Preliminary  
XVT9007  
• Voltage Controlled Temperature Compensated Crystal Oscillator  
• Excellent Frequency Stability & Low Phase Noise  
• 3.2 x 2.5 x 1.3 mm Surface-Mount Case  
• Complies with Directive 2002/95/EC (RoHS)  
19.6608 MHz  
VCTCXO  
Pb  
SM3225-4 Case  
Electrical Characteristics  
Characteristic  
Sym  
Notes  
Minimum  
Typical  
Maximum  
Units  
Nominal Frequency  
Fo  
19.660800  
MHz  
°C  
Storage Temperature  
-40  
-20  
+85  
+75  
2.94  
Operating Temperature Range  
Power Supply Voltage  
°C  
Vcc  
2.66  
0.8  
2.8  
V
V
Output Voltage with Load 10 pF||10 KΩ  
Output Wave form  
Vout  
P-P  
clipped sinewave  
1.4±1.0  
Power Supply Current  
Icc  
2.0  
mA  
V
Control Voltage  
Vcon  
Control Voltage Input Impedance  
Frequency Tolerance, Vcontrol = 1.4 V (after Reflow)  
Frequency Stability versus:  
Temperature, -20 to 75 °C  
Supply Voltage, 2.66 to 2.94 V  
Load 10 pF||10 K±10%  
100K  
ohms  
±2 ppm max @ 25 °C ±3 °C  
±2.5  
±0.2  
±0.2  
ppm  
ppm  
ppm  
Control Voltage Frequency Range (1.4 ±1.0 V)  
±8  
±14  
2.0  
ppm  
Start Up Time, 90% of final RF level in V  
ms  
P-P  
Aging @ 25 °C  
±1  
ppm/year  
dBc  
Harmonics  
-5.0  
SSB Phase Noise @ 1 kHz Carrier Offset  
Stanard Shipping Quantity on 180 mm (7”) Reel  
Lid Symbolization  
-130 dBc/Hz maximum  
1000  
units  
9007 // YWWS  
CAUTION: Electrostatic Sensitive Device. Observe precautions for handling.  
Notes:  
1.  
The design, manufacturing process, and specifications of this device are subject to change without notice.  
www.RFM.com E-mail: info@rfm.com  
©2009-2010 by RF Monolithics, Inc.  
Page 1 of 3  
XVT9007 - 2/2/10  

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