Datasheet > XTS3212

XTS3212

更新时间： 2024-09-23 00:04:23

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描述
MOS管场效应管

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中文翻译

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数据手册

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XTS3212 数据手册

XTS

XTS2312

N-Channel Enhancement Mode Field Effect Transistor

V_DS=20V，

I_D=4.5A

V_GS@4.5V

V_GS@2.5V

XTS2312

R_DS(ON)< 33mΩ,

R_DS(ON)< 40mΩ,

Features

● high dense cell design for extremely low R

DS(ON)

● Rugged and reliable.

● Lead free product is acquired

● SOT-23-3L Package

ABSOLUTE MAXIMUM RATLNGS(TA=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate- Source Voltage

±8

4.5

Drain Current –Continuous @ T =125℃Pulsed

13.5

1.25

Maximum Power Dissipation

T ，T

Operating Junction and Storage Temperature Range

-55 to 150

℃

STG

THERMAL CHARACTERISTICS

Parameter

Symbol

Limit

Units

100

℃/W

Thermal Resistance，Junction-to-Ambient

θJA

ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BV_DSS

I_DSS

V_GS=0V，I_D=250µA

V_DS=20V，V_GS=0V

V_GS=8V，V_DS=0V

V_GS=-8V，V_DS=0V

Zero Gate Voltage Drain Current

Gate-Body Leakage Current For

Gate-Body Leakage Current Rev

ON CHARACTERISTICE ^b

µA

I_GSSF

I_GSSR

100

-100

V_GS(th)

V_DS=V_GS,I_D=50µA

V_GS=4.5V,I_D=5.0A

V_GS=2.5V, I_D=4.5A

V_DS=10V, I_D=5.0A

Gate Threshold Voltage

0.5

1.2

mꢀ

R_DS(ON)

Drain-Source On-State Resistance

g_FS

Forward Transconductance

DYNAMIC CHARACTERISTICS^C

Input Capacitance

Clss

Coss

C_RSS

500

300

140

V_DS=8V,V_GS=0V,F=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS^C

t_d(on)

Turn-on Delay Time

Turn-on Rise Time

Turn-Off Delay Time

Fall Time

V_D=10V

I_D=1A

t_r

t_d(off)

t_f

V_GS=4.5V

108

R_GEN=6ꢀ

12 3

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