Datasheet > XRA30AA20SESB

XRA30AA20SESB

更新时间： 2024-10-15 17:02:11

品牌	Logo	应用领域
安伦 - ANAREN		/
页数	文件大小	规格书
2页	559K
描述
Attenuators - SMD

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XRA30AA20SESB 数据手册

XRA30AA20SESB

Rev D

Surface Mount Attenuator

30 Watts, 20dB

Description:

The XRA30AA20SESB is a high performance Aluminum Nitride

(AlN) chip attenuator intended as a cost competitive alternative to

Beryllium Oxide (BeO). It is designed particularly for all end markets

from DC – 6GHz including LTE, 5G and Mil-Aero applications. The

high power handling makes the part ideal for inter-stage matching,

directional couplers, and for use in isolators. The attenuator is also

RoHS compliant!

General Specifications:

Resistive Element

Substrate

Features:

• 30 Watts (CW)

Thick film

AlN Ceramic

Terminal Finish

Operating

Temperature

Matte Tin over Nickel Barrier

-55 to +150°C (see de rating

chart)

• DC – 6.0GHz

• Low Cost

• Low VSWR

• AlN Ceramic

Electrical Specifications:

20 dB ± 1.5 dB

19 dB ± 1.5 dB

DC – 5.0 GHz

5.0 – 6.0 GHz

Attenuation Value:

• Non-Nichrome

Resistive Element

Power:

30 Watts (avg CW @ 100°C)

Frequency Range:

DC – 6.0GHz

>20dB DC - 5.0GHz

>17dB 5.0-6.0 GHz

• RoHS Compliant

• 100% Tested

Input Return Loss:

Specification based on unit properly installed using suggested mounting

instructions and a 50 ohm nominal impedance. Specifications subject to change.

Outline Drawing:

** FOR PROPER OPERATION PAD X MUST BE CONNECTED TO THE INPUT

UNLESS OTHERWISE SPECIFIED ALL DIMENSIONS ARE IN INCHES

Tolerance is ±0.010”, unless otherwise specified. Designed to meet or exceed applicable portions of MIL-E-5400. All dimension

in inches.

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