5秒后页面跳转
XQR18V04CC44M PDF预览

XQR18V04CC44M

更新时间: 2024-09-17 19:36:11
品牌 Logo 应用领域
赛灵思 - XILINX 时钟内存集成电路
页数 文件大小 规格书
16页 161K
描述
Configuration Memory, 512X8, Parallel/serial, CMOS, CQCC44, CERAMIC, LCC-44

XQR18V04CC44M 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:LCC
包装说明:QCCJ, LDCC44,.7SQ针数:44
Reach Compliance Code:compliantECCN代码:USML XV(E)
HTS代码:8542.32.00.71风险等级:5.85
最大时钟频率 (fCLK):20 MHz数据保留时间-最小值:10
耐久性:2000 Write/Erase CyclesJESD-30 代码:S-CQCC-J44
JESD-609代码:e0长度:16.51 mm
内存密度:4096 bit内存集成电路类型:CONFIGURATION MEMORY
内存宽度:8功能数量:1
端子数量:44字数:512 words
字数代码:512工作模式:SYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:512X8封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装代码:QCCJ封装等效代码:LDCC44,.7SQ
封装形状:SQUARE封装形式:CHIP CARRIER
并行/串行:PARALLEL/SERIAL峰值回流温度(摄氏度):NOT SPECIFIED
电源:2.5/3.3,3.3 V认证状态:Not Qualified
座面最大高度:4.826 mm最大待机电流:0.02 A
子类别:Flash Memories最大压摆率:0.05 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子面层:TIN LEAD端子形式:J BEND
端子节距:1.27 mm端子位置:QUAD
处于峰值回流温度下的最长时间:NOT SPECIFIED总剂量:40k Rad(Si) V
类型:NOR TYPE宽度:16.51 mm
Base Number Matches:1

XQR18V04CC44M 数据手册

 浏览型号XQR18V04CC44M的Datasheet PDF文件第2页浏览型号XQR18V04CC44M的Datasheet PDF文件第3页浏览型号XQR18V04CC44M的Datasheet PDF文件第4页浏览型号XQR18V04CC44M的Datasheet PDF文件第5页浏览型号XQR18V04CC44M的Datasheet PDF文件第6页浏览型号XQR18V04CC44M的Datasheet PDF文件第7页 
0
QPro XQR18V04 Radiation  
Hardened 4Mbit QML ISP  
Configuration Flash PROM  
Product Specification  
R
0
5
DS082 (v1.5) October 5, 2004  
Features  
Description  
Operating Temperature Range: –55°C to +100°C  
Xilinx introduces the QPro™ XQR18V04 radiation hard-  
ened QML 4Mbit in-system programmable configuration  
Flash PROM. The XQR18V04 is a 3.3V latch-up immune,  
static SEU immune, rewritable PROM that provides a reli-  
able non-volatile method for storing large Xilinx FPGA con-  
figuration bitstreams used in space flight systems.  
Latch-Up Immune to LET >120 MeV/cm2/mg  
Guaranteed TID of 30 kRad(Si) per spec 1019.5  
Fabricated on Epitaxial Substrate  
Low-power advanced CMOS FLASH process memory  
cells immune to static single event upset  
When the FPGA is in Master Serial mode, it generates a  
configuration clock that drives the PROM. A short access  
time after the rising CCLK, data is available on the PROM  
DATA (D0) pin that is connected to the FPGA DIN pin. The  
FPGA generates the appropriate number of clock pulses to  
complete the configuration. When the FPGA is in Slave  
Serial mode, the PROM and the FPGA are clocked by an  
external clock.  
Supports SEU Scrubbing for Virtex series FPGAs  
In-system programmable 3.3V PROMs for  
configuration of Xilinx FPGAs  
-
-
Endurance of 2,000 program/erase cycles  
Program/erase over operational temperature range  
IEEE Std 1149.1 boundary-scan (JTAG) support  
Cascadable for storing longer or multiple bitstreams  
Dual configuration modes  
When the FPGA is in SelectMAP mode (Slave), an external  
oscillator will generate the configuration clock that drives  
the PROM and the FPGA. After the rising CCLK edge, data  
are available on the PROMs DATA (D0-D7) pins. The data  
will be clocked into the FPGA on the following rising edge of  
the CCLK. See Figure 3.  
-
-
Serial Slow/Fast configuration (up to 20 MHz)  
Parallel (up to 160 Mbps at 20 MHz)  
5V tolerant I/O pins accept 5V, 3.3V, and 2.5V signals  
3.3V or 2.5V output capability  
Multiple devices can be cascaded by using the CEO output  
to drive the CE input of the following device. The clock  
inputs and the DATA outputs of all PROMs in this chain are  
interconnected. The XQR18V04 is compatible and can be  
cascaded with other configuration PROMs such as the  
XQR1701L and XQR17V16 one-time programmable con-  
figuration PROMs.  
Available in CC44 package  
Design support using the Xilinx Alliance Series™ and  
Xilinx Foundation Series™ software packages  
JTAG command initiation of standard FPGA  
configuration  
OE/Reset  
CLK CE  
TCK  
Data  
Control  
CEO  
Serial  
or  
Parallel  
Interface  
TMS  
TDI  
and  
JTAG  
Interface  
Memory  
D0 DATA  
(Serial or Parallel  
[Express/SelectMAP] Mode)  
Data  
Address  
TDO  
7
D[1:7]  
Express Mode and  
SelectMAP Interface  
CF  
DS026_01_021000  
Figure 1: XQR18V04 Series Block Diagram  
© 2001 – 2003 Xilinx, Inc. All rights reserved. All Xilinx trademarks, registered trademarks, patents, and disclaimers are as listed at http://www.xilinx.com/legal.htm.  
All other trademarks and registered trademarks are the property of their respective owners. All specifications are subject to change without notice.  
DS082 (v1.5) October 5, 2004  
www.xilinx.com  
1
Product Specification  
1-800-255-7778  

与XQR18V04CC44M相关器件

型号 品牌 获取价格 描述 数据表
XQR18V04CCG44M XILINX

获取价格

Configuration Memory, 512X8, Parallel/serial, CMOS, CQCC44, CERAMIC, LCC-44
XQR18V04CCG44V XILINX

获取价格

Configuration Memory, 512X8, Parallel/serial, CMOS, CQCC44, CERAMIC, LCC-44
XQR18V04VQ44N XILINX

获取价格

Configuration Memory, CMOS, PQFP44
XQR2V1000-4BG575N XILINX

获取价格

Field Programmable Gate Array, 1280 CLBs, 1000000 Gates, 650MHz, 11520-Cell, CMOS, PBGA575
XQR2V1000-4BG575R XILINX

获取价格

Field Programmable Gate Array, 1280 CLBs, 1000000 Gates, 650MHz, 11520-Cell, CMOS, PBGA575
XQR2V1000-4FG456N XILINX

获取价格

Field Programmable Gate Array, 1280 CLBs, 1000000 Gates, 650MHz, 11520-Cell, CMOS, PBGA456
XQR2V1000-4FGG456N XILINX

获取价格

Field Programmable Gate Array, 1280 CLBs, 1000000 Gates, 650MHz, CMOS, PBGA456, 1 MM PITCH
XQR2V1000-4FGG456R XILINX

获取价格

Field Programmable Gate Array, 1280 CLBs, 1000000 Gates, 650MHz, CMOS, PBGA456, 1 MM PITCH
XQR2V3000-4BG728R XILINX

获取价格

Field Programmable Gate Array, 3584 CLBs, 3000000 Gates, 650MHz, 32256-Cell, CMOS, PBGA728
XQR2V3000-4BGG728N XILINX

获取价格

Field Programmable Gate Array, 3584 CLBs, 3000000 Gates, 650MHz, CMOS, PBGA728, 1.27 MM PI