Datasheet > XPH4R714MC

XPH4R714MC

更新时间： 2024-11-06 14:56:15

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
10页	624K
描述
P-ch MOSFET, -40 V, -60 A, 0.0047 Ω@10V, SOP Advance(WF)

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XPH4R714MC 数据手册

XPH4R714MC

MOSFETs Silicon P-Channel MOS (U-MOS�)

XPH4R714MC

1. Applications

•

Automotive

Switching Voltage Regulators

DC-DC Converters

Motor Drivers

2. Features

(1) AEC-Q101 qualified

(2) Small, thin package

(3) Low drain-source on-resistance: RDS(ON) = 3.6 mΩ (typ.) (VGS = -10 V)

(4) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V)

(5) Enhancement mode: Vth = -1.0 to -2.1 V (VDS = -10 V, ID = -1 mA)

3. Packaging and Internal Circuit

1, 2, 3: Source

4: Gate

5, 6, 7, 8: Drain

SOP Advance(WF)

Start of commercial production

2019-06

2021-12-02

Rev.5.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7...10

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