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XPH3R304PB PDF预览

XPH3R304PB

更新时间: 2024-11-06 14:58:23
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
10页 563K
描述
N-ch MOSFET, 40 V, 60 A, 0.0033 Ω@10V, SOP Advance(WF)

XPH3R304PB 数据手册

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XPH3R304PB  
MOSFETs Silicon N-channel MOS (U-MOS-H)  
XPH3R304PB  
1. Applications  
Automotive  
Motor Drivers  
Switching Voltage Regulators  
2. Features  
(1) AEC-Q101 qualified  
(2) Small, thin package  
(3) Low drain-source on-resistance: RDS(ON) = 2.5 m(typ.) (VGS = 10 V)  
(4) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)  
(5) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 0.2 mA)  
3. Packaging and Internal Circuit  
1, 2, 3: Source  
4: Gate  
5, 6, 7, 8: Drain  
SOP Advance(WF)  
Start of commercial production  
2022-09  
©2019-2022  
2022-12-21  
Rev.2.0  
1
Toshiba Electronic Devices & Storage Corporation  

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